Patents

Issued

  1. “Power Generation from Solid Aluminum (continuation in part)” (Woodall, Allen, Ziebarth) #8,080,233 B2, 2011
  2. “Power Generation from Solid Aluminum” (Woodall, Harmon, Koehler, Ziebarth, Allen, Zheng, Jeon, Goble, Salzman) #7,938,879 B2, 2011
  3. “Optically Addressed Spatial Light Modulator Method” (Woodall, Sachs)#7,440,157 B2, 2008
  4. “Hypercontacting” (Harmon, Salzman, Woodall), #7,179,731 B2, 2007
  5. “Method of Hyperdoping Semiconductor Materials and Hyperdoped Semiconductor Devices” (Boone, Harmon, Koudelka, Salzman, Woodall)#7,179,329 B2, 2007
  6. “Composite pinin collector structure for heterojunction bipolar transistors” (Harmon, Woodall, Tsukamoto, Salzman), #6,809,400, 2004.
  7. “High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region”, (Woodall, Koudelka) #6,607,932, 2003.
  8. “High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region”, (Woodall, Koudelka) #6,448,582, 2002.
  9. “Dual-metal-trench silicon carbide Schottky pinch rectifier”, (Schoen, Henning, Woodall, Cooper, Melloch) #6,362,495, 2002.
  10. “LTG AlGaAs non-linear optical material and devices fabricated therefrom”, (Freeouf, Hodgson, Kirchner, Melloch, Woodall, Nolte) #5,508,829, 1996.
  11. “Incandescent Light Energy Conversion with Reduced IR Emission” (Woodall, Kornegay, Spencer), #5,814,840, 1998.
  12. “Method of Making a Compound Semiconductor having Metallic Inclusions”, (Burroughes, Hodgson, McInturff, Melloch, Otsuka, Solomon, Warren, Woodall), #5,471,948, 1995.
  13. “Compound Semiconductor having Metallic Inclusions and Devices Fabricated Therefrom”, (Burroughes, Hodgson, McInturff, Melloch, Otsuka, Solomon, Warren, Woodall), #5,371,399, 1994.
  14. “Strained Defect-Free Epitaxial Mismatched Heterostructures and Method of Fabrication” (Chisholm, Kirchner, Warren, Woodall), #5,221,367, 1993.
  15. “Method for In-situ Detemination of the Fermi Level in GaAs and Similar Materials by Photoreflectance” (Pollak, Woodall, Montano), #5,159,410, 1992.
  16. “Biaxial-Stress Barrier Shifts in Pseudomorphic Tunnel Devices,” (Mendez, Smith III, Woodall), #5,132,746, 1992.
  17. “Resonant Tunneling Photodetector for Long Wavelength Applications,” (Smith III, Woodall), #5,121,181, 1992.
  18. “Method for Forming Distributed Barrier Compound Semiconductor Contacts,” (Jackson, Murakami, Price, Tiwari, Woodall, Wright), #5,098,859, 1992.
  19. “Semiconductor Ballistic Electron Velocity Control Structure,” (Freeouf, Jackson, Kirchner, Tang, Woodall), #5,049,955, 1991.
  20. “Compound Semiconductor Interface Control Using Cationic Ingredient Oxide to Prevent Fermi Level Pinning,” (Kirchner, Warren, Woodall, Wright),#5,021,365, 1991.
  21. “Method of Making Metal Insulator/Metal Junction with Adjustable Barrier Heights,” (Kleinsasser, Woodall), #5,019,530, 1991.
  22. “Submicron Dimension Compound Semiconductor Fabrication Using Thermal Etching,” (Fossum, Kirchner, Pettit, Warren, Woodall), #4,920,069, 1990.
  23. “Semiconductor Heterostructure Adapted for Low Temperature Operation,” (Jackson, Kleinsasser, Woodall), #4,860,067, 1989.
  24. “Semiconductor Electro-optical Conversion” (Kirchner, Marks, Pettit, Woodall, Wright), #4,860,066, 1989.
  25. “Thermally Stable Low Resistance Contact” (Jackson, Murakami, Price, Tiwari, Woodall, Wright), #4,849,802, 1989.
  26. “Compound Semiconductor Interface Control” (Kirchner, Warren, Woodall, Wright), #4,843,450, 1989.
  27. “Compound Semiconductor Surface Termination” (Fowler, Freeouf, Kirchner, Warren, Woodall), #4,811,077, 1989.
  28. “Heterojunction Interdigitated Schottky Barrier Photodetector” (Rogers, Woodall, Pettit, McInturff), #4,807,006, 1989.
  29. “Semiconductor Ohmic Contact,” (Woodall) #4,801,984, 1989.
  30. “Group III-V Semiconductor Electrical Contact” (Jackson, Kirchner, Pettit, Rutz, Woodall), #4,757,369, 1988.
  31. “MESFET Semiconductor Device Fabrication with Same Metal Contacting Source, Drain and Gate Regions” (Hovel, Woodall), #4,757,358, 1988.
  32. “Semiconductor Injection Lasers,” (Jackson, Woodall), #4,751,708, 1988.
  33. “Process for Producing Aluminum Alkoxide or Aluminum Aryloxide,” (Cuomo, Leary, Woodall), #4,745,204, 1988.
  34. “Space Charge Modulation Device,” (Freeouf, Jackson, Laux, Woodall),#4,638,342, 1987.
  35. “Intermediate Passivation and Cleaning of Compound,” (Freeouf, Jackson, Oelhafen, Pettit, Woodall), #4,597,825, 1986.
  36. “Intermetallic Semiconductor Ohmic Contact,” (Jackson, Kirchner, Pettit, Woodall), #4,583,110, 1986.
  37. “Heterojunction Semiconductor,” (Chappell, Chappell, Woodall), #4,550,489, 1985.
  38. “Narrow Line Width Pattern Fabrication,” (Binnig, Feenstra, Hodgson, Rohrer, Woodall), #4,550,257, 1985.
  39. “Silicon Source for Molecular Beam Epitaxy,” (Jackson, Kirchner, Pettit, Rosenberg, Woodall, Wright), #4,550,047, 1985.
  40. “High Spatial Resolution Energy Discrimination,” (Chappell, Chappell, Woodall), #4,533,940, 1985.
  41. “Ballistic Conduction Semiconductor Device,” (Jackson, Woodall), #4,532,533, 1985.
  42. “Semiconductor Conversion of Optical-to-Electrical Energy,” (Chappell, Jackson, Woodall), #4,525,731, 1985.
  43. “Semiconductor Transistor with Graded Base and Collector,” (Dumke, Woodall), #4,518,979, 1985.
  44. “Multiwavelength Optical-to-Electrical Logic Operations,” (Chappell, Woodall),#4,504,846. 1985.
  45. “Electro-Optic Signal Conversion,” (Chappell, Pohl, Woodall), #4,477,721, 1984.
  46. “Method of Activating Implanted Impurities,” (Hodgson, Jackson, Rupprecht, Woodall), #4,472,206, 1984.
  47. “Heterojunction Semiconductor,” (Chappell, Chappell, Woodall), #4,460,910, 1984.
  48. “Photon Energy Conversion,” (Cuomo, DiStefano, Woodall), #4,448,487, 1984.
  49. “Refractory Structure and Process for Boron Coatings,” (Freeouf, Haag, Woodall), #4,436,768, 1984.
  50. “Volatile Metal Oxide Suppression in MBE Systems,” (Freeouf, Kirchner, Pettit, Woodall), #4,426,237, 1984.
  51. “Semiconductor Device Fabrication,” (Hovel, Woodall), #4,379,005, 1983.
  52. “Semiconductor Ballistic Transport Device,” (Braslau, Freeouf, Pettit, Rupprecht, Woodall) #4,366,493, 1982.
  53. “Solid State Renewable Energy Supply,” (Cuomo, Woodall) #4,358,291, 1982.
  54. “Zinc-Sulphide Capping Layer for Gallium Arsenide Device,” (Hodgson, Pettit, Sedgwick, Woodall), #4,354,198, 1982.
  55. “Electron Source,” (Cuomo, Dreyfus, Woodall), #4,352,117, 1982.
  56. “Electrochemically Eroding Semiconductor Device,” (Chappell, Pettit, Woodall),#4,351,706, 1982.
  57. “Energy Conversion,” (Woodall) #4,316,048, 1982.
  58. “Annealing of Ion Implanted III-V Compound Having Higher Dissociation Pressure,” (Rupprecht, Woodall), #4,312,681, 1982.
  59. “Heterojunction V-Groove Multijunction Solar Cells,” (Chappell, Woodall),#4,295,002, 1981.
  60. “Control of Surface Recombination Loss in Solar Cells,” (Hovel, Woodall),#4,276,137, 1981.
  61. “Optical Energy Conversion,” (Hodgson, Hovel, Woodall), #4,202,704, 1980.
  62. “Semiconductor Structure,” (Hovel, Woodall), #4,178,195, 1978.
  63. “Semiconductor Heterostructure,” (Hovel, Woodall), #4,122,476, 1978.
  64. “Photon Energy Converter,” (Cuomo, Woodall, Ziegler), #4,005,698, 1977.
  65. “Two Stage Heteroepitaxial Deposition Process for GaAsP/Si LED’s,” (Kemlage, Woodall, Wuestenhoefer), #3,963,539, 1976.
  66. “Laser Device Having Enclosed Laser Cavity,” (Dumke, Woodall), #3,893,044, 1975.
  67. “Integrated Optically Coupled Light Emitter and Sensor,” (Rideout, Woodall),#3,881,113, 1975.
  68. “Isothermal Solution Mixing Growth of Solids,” (Grandia, Potemski, Woodall),#3,881,037, 1975.
  69. “Method of Doping During Epitaxy,” (Woodall) #3,874,952, 1975.
  70. “Bipolar Transistor with a Heterojunction Emitter and a Method Fabricating the Same,” (Dumke, Rideout, Woodall), #3,780,359, 1973.
  71. “Preparation of Semiconductor Ternary Compound of Controlled Composition by Predetermined Cooling Rates,” (Rupprecht, Woodall),#3,773,571, 1973.
  72. “Converter of Electromagnetic Radiation to Electrical Power,” (Woodall)#3,675,026, 1972.
  73. “Epitaxial Growth from Solution with Amphoteric Dopant,” (Rupprecht, Woodall), #3,600,240, 1971.
  74. “Method of Preparing Green-Emitting Gallium Phosphide Diodes by Epitaxial Solution Growth,” (Blum, Foster, Shih, Woodall), #3,585,087, 1971.
  75. “Process for Preparing Low Resistivity High Purity Gallium Arsenide,” (Woodall, Wuestenhoefer), #3,551,116, 1970.
  76. “Manufacture of Single Crystal Semiconductors,” (Plaskett, Woodall, Wuestenhoefer), #3,520,810, 1970.
  77. “Preparation of Gallium Arsenide with Controlled Silicon Concentrations,” (Woodall) #3,322,501, 1967.

Applications

  • “Energy Storage and Generation of Hydrogen and Heat on Demand” (Woodall, Choi) #2012/0052001 A1, 2012
  • “Method of Fabricating a Semiconductor Junction” (Woodall, Montgomery)#2011/0048537 A1, 2011
  • “Superlattice Structure and Method For Manufacturing Same” (Montgomery, Agarwal, Klimeck, Woodall) Provisional #61/172,465, 2008
  • “Method of Making Nanowires” (Harmon, Woodall, Salzman) #2007/0108435 A1, 2007
  • “Surface Passivation for III-V Compound Semiconductors” (Salzman, Yulius, Chen, Woodall, Harmon) #2006/0145190 A1, 2006
  • “Large Area Detector” (Harmon, Salzman, Hyland, Woodall, Koudelka)#2006/0175529 A1, 2006
  • “Devices Incorporating Heavily Defected Semiconductor Layers” (Salzman, Harmon, Woodall) #2006/0267007 A1, 2006
  • “Method of Passivating Compound Semiconductor Surfaces” (Hyland, Harmon, Salzman, Koudelka, Woodall) #2006/0286705 A1, 2006

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