Journal Articles

All articles may be downloaded for personal use only.
Any other use requires prior permission of the author and the publisher.
* Refers to first report/invention of new device/structure/ materials science/technology
Top    –    2010-Present    –    2000-2009    –    1990-1999    –    1980-1989    –    1970-1979    –    1960-1969

2010-Present

    1. Harotoonian, V. & Woodall, J.M., “Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust Schottky Contacts,” Journal of Electronic Materials (2016) 45: 6305. doi.org/10.1007/s11664-016-5030-3
    2. Noorzad, C.D., Zhao, X., Harotoonian, V., and J.M Woodall, “Improved High-Energy Response of AlGaAs/GaAs Solar Cells Using a Low-Cost Technology,” Journal of Electronic Materials (2016) 45: 6317. doi.org/10.1007/s11664-016-5015-2
    3. X. Zhao, K. H. Montgomery, and J. M. Woodall, “Hall Effect Studies of AlGaAs Grown by Liquid Phase Epitaxy for Tandem Solar Cell Applications,” Journal of Electronic Materials, vol. 43, no. 11, pp. 3999-4002, 2014. [pdf]  doi: 10.1007/s11664-014-3340-x
    4. X. Zhao, K. H. Montgomery, and J. M. Woodall, “Layered Growth of Lattice-Mismatched GaInP on GaP Substrates by Liquid Phase Epitaxy,” Journal of Electronic Materials, vol. 43, no. 4, pp. 894-901, 2014. [pdf] doi: 10.1007/s11664-013-2966-4
    5. D. Berdebes, J. Bhosale, K. H. Montgomery, X. Wang, A. Ramdas, J. M. Woodall, and M. S. Lundstrom, “Photoluminescence Excitation Spectroscopy for In-line Optical Characterization of Crystalline Solar Cells,” IEEE Journal of Photovoltaics, vol. 3, no. 4, pp. 1342-1347, 2013. [pdf] doi: 10.1109/JPHOTOV.2013.2278884
    6. C. R. Allen, J. M. Woodall, and J. H. Jeon, “Results of a gallium phosphide photovoltaic junction with an AR coating under concentration of natural sunlight,” Solar Energy Materials and Solar Cells, vol. 95, pp. 2655-2658, 2011.[pdf] doi: 10.1016/j.solmat.2011.05.034
    7. J. Simon, P. J. Simmonds, J. M. Woodall, and M. L. Lee, “Graphitized carbon on GaAs(100) substrates,” Applied Physics Letters, vol. 98, pp. 073113-3, 2011. [pdf] doi: 10.1063/1.3555442
    8. P. J. Simmonds, J. Simon, J. M. Woodall, and M. L. Lee, “Molecular beam epitaxy approach to the graphitization of GaAs(100) surfaces,” Journal of Vacuum Science & Technology B, vol. 29, pp. 03C103-5, 2011. [pdf] doi: 10.1116/1.3547716
    9. J. T. Ziebarth, J. M. Woodall, R. A. Kramer, and G. Choi, “Liquid phase-enabled reaction of Al–Ga and Al–Ga–In–Sn alloys with water,” International Journal of Hydrogen Energy, vol. 36, pp. 5271-5279, 2011. [pdf] doi: 10.1016/j.ijhydene.2011.01.127
    10. K. H. Montgomery, C. Allen, I. Wildeson, J. H. Jeon, A. Ramdas, and J. M. Woodall, “Gettered GaP Substrates for Improved Multijunction Solar Cell Devices,” Journal of Electronic Materials, vol. 40, pp. 1457-1460, 2011. [pdf] doi: 10.1007/s11664-011-1605-1
    11. S. Agarwal, K. H. Montgomery, T. B. Boykin, G. Klimeck, and J. M. Woodall, “Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys”, Electrochem. Solid-State Lett., vol. 13, p. H5, 2010. [pdf] doi: 10.1149/1.3250436
    12. C.R. Allen, J-H. Jeon, and J.M. Woodall, “Simulation Assisted Design of a GaP n-p Photovoltaic Junction,” Solar Energy Materials and Solar Cells, vol. 94, pp. 865, 2010. [pdf] doi: 10.1016/j.solmat.2010.01.009

Top    –    2010-Present    –    2000-2009    –    1990-1999    –    1980-1989    –    1970-1979    –    1960-1969

2000-2009

    1. A. Chen and J.M. Woodall, “ Photodiode Characterisitics and Band Alignment Parameters of Epitaxial Al0.5Ga0.5P”, Appl. Phys. Lett., vol. 94, pp. 021102-3, 2009. [pdf] doi: 10.1063/1.3069282
    2. Ning Li, Eric S. Harmon, David B. Salzman, Dmitri N. Zakharov, Jong-Hyeok Jeon, Eric Stach, Jerry M. Woodall, X. W. Wang, T. P. Ma, and Fred Walker “MBE Growth of InAs and In0.8Ga0.2As Channel Materials on GaAs Substrate for Metal Oxide Semiconductor Field Effect Transistor Applications”, J. Vac. Sci. Technol. B, vol. 26, p. 1187, 2008. [pdf] doi: 10.1116/1.2912086
    3. J.L Pan, J.E. McManis, M. Gupta, M.P. Young, and J.M. Woodall, “Novel Deep Centers for High-Performance, Optical Materials,  Appl. Phys. A, 90, 2008, p 105.[pdf] doi: 10.1007/s00339-007-4322-0
    4. T. Yang, Y. Xuan, D. Zemlyanov, T. Shen, Y. Wu, J.M. Woodall, P. Ye, F. Aguine-Tostado, M. Milojevic, S. McDonnell, and R. Wallace, “Interface Studies of GaAs Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited HfO2-Al2O3 Nanolaminate Gate Dielectric”, Appl. Phys. Lett. 91, 2007,  p. 142122. [pdf] doi: 10.1063/1.2798499
    5. A. Chen and J.M. Woodall “Field-Effect Transistors on Molecular Beam Epitaxy GaP”. Appl. Phys. Lett., 90, 2007, p.103509. [pdf] doi: 10.1063/1.2710476
    6. A. Chen, M. Young, W. Li, T. Ma, and J.M. Woodall “Metal-Insulator Semiconductor Structure on Low-Temperature Grown GaAs,” Appl. Phys. Lett., 89, (2006) p. 233514. [pdf] doi: 10.1063/1.2404605
    7. A. Chen, M. Young, and J.M. Woodall, “InAs/InGaP/GaAs Heterojunction Power Schottky Rectifiers”,  Electronics Lett.  42 (2006) p. 417. [pdf] doi: 10.1049/el:20064437
    8. G. Li, Y. Sun, J.M. Woodall, H.Yan, J. Freeouf, “ Spectral Response of a Novel Design of InP Single Crystal Thin Film Solar Cells, J. Syn. Crys.  2004-2005 issue.
    9. G. Li Y. Sun, H. Yan, A. Yulius, and J.M. Woodall “Investigation of Double Graded Doping Drift Dominated InP/GaP Photodiodes”, Bandaoti Xuebao, 26 (2005) p. 354.
    10. H. Tsukamoto, T.D. Boone, and J.M. Woodall, “Optical Signal Routing using Emission Packet Positioning of Semiconductor Heterostructure”, IEEE Phot. Technol. Lett.  17, (2005) p. 1411. [pdf] doi: 10.1109/LPT.2005.848330
    11. R.H. Ruess, J.M. Woodall, et al., “Macroelectronics:  Perspectives on Technology and Applications”  Proc of the IEEE, 93 (2005). [pdf] doi: 10.1109/JPROC.2005.851237
    12. Y. Sun, A. Yulius, and J.M. Woodall, “Efficient Drift Dominated Photodiodes using Defected Materials”, Appl. Phys. Lett., 86 (2005)  091108. [pdf] doi: 10.1063/1.1875757
    13. A. Chen A.Yulius A, JM Woodall, and CC Broadbridge, “A Hybrid Method for InAs on GaP”, Appl, Phys. Lett., 85 (16) 2004: 3447-3449. [pdf] doi: 10.1063/1.1808241
    14. A. Beck, B. Yang, S. Wang, C. Collins, J. Campbell, A. Yulius, A. Chen, J.M. Woodall, “Quasi-Direct UV/Blue Avalanche Photodetectors”,  IEEE J. Q. Electron, 40 (12) Dec. 2004; p. 1695-1699. [pdf] doi: 10.1109/JQE.2004.837788
    15. Y.Sun, A.Yulius, G.Li, J.M.Woodall, “Drift Dominated InP/GaP Photodiodes”,Solid-State Electron. 48 (10-11), Oct-Nov. 2004; p. 1975-1979. [pdf] doi: 10.1016/j.sse.2004.05.043
    16. J.Pan, J.McManis, L.Grober, J.M.Woodall, “Gallium Arsenide Deep-Level Tunnel Diode with Record Negative Conductance and Record Peak Current Density”,Solid-State Electron. 48 (10-11), Oct-Nov. 2004; p. 2067-2070. [pdf] doi: 10.1016/j.sse.2004.05.071
    17. A.Chen, J.M.Woodall, “InAs/GaP/GaInP High-Temperature Power Schottky Rectifier”, Appl. Phys. Lett. 84 (15), 12 April 2004; p. 2844-2846. [pdf] doi: 10.1063/1.1711180
    18. J.Pan, J.McManis, L.Grober, J.M.Woodall, “Gallium Arsenide Deep-Level pin Tunnel Diode with Very Negative Conductance”, Electron. Lett. 39 (19), 18 Sept. 2003; p.1411-1412. [pdf] doi: 10.1049/el:20030895
    19. J.Pan, J.McManis, T.Osadchy, J.M.Woodall, “Gallium Arsenide Deep-Level Optical Emitter for Fibre Optics”, Nature Materials, 2 (6), June 2003; p. 375-378. [pdf] doi: 10.1038/nmat887
    20. T.Boone, H.Tsukamoto,  J.M.Woodall, “Intensity and Spatial Modulation of Spontaneous Emission in GaAs by Field Aperature Selection Transport:, Appl. Phys. Lett. 82 (19) 12 May 2003; p. 3197-3199. [pdf] doi: 10.1063/1.1572467
    21. G.Li, Q.Yang, Z.Yan, Y.Sun, J.M.Woodall, “Extreme Radiation Hardness and Light-Weighted Thin-Film Indium Phosphide Solar Cell and its Computer Simulation”, Solar Energy Materials and Solar Cells 75 (1-2) Jan. 2003; p. 307-312.[pdf] doi: 10.1016/S0927-0248(02)00173-3
    22. J. M. Woodall, “Readers Illiuminate Issues of Solid-State Lighting”, Physics Today55 (8), Aug. 2002; p. 71-72. [pdf] doi: 10.1063/1.1510297
    23. R. Zhu, M.C. Hargis, J.M.Woodall, and M.R. Melloch, “Metal-Mirror-Based Resonant-Cavity Enhanced Light-Emitting Diodes by the Use of a Tunnel Diode Contact”, Phot. Tech. Lett. Vol. 13, No. 2 , 2001; p. 103-105. [pdf] doi: 10.1109/68.910502
    24. M.Akbulut, CH.Chen, M.C. Hargis, J.M.Woodall, “Digital Communications Above 1 Gb/s using 890 nm Surface-Emitting Light-Emitting Diodes”, IEEE Phot. Tech. Lett. 13 (1) Jan. 2001; p. 85-87. [pdf] doi: 10.1109/68.903229
    25. H. Tsukamoto, E.-H. Chen, V. Gopal, J.M. Woodall, “Correlation of defect profiles with carrier profiles  of InAs epilayers on GaP”, Appl. Phys. Lett. Vol. 78, No. 7, 2001; p.952-954. [pdf] doi: 10.1063/1.1338956
    26. T. Lee, N.P.Chen, J.Liu, R.P. Andres, D.B. Janes, E-H. Chen, M.R. Melloch, J.M. Woodall, R. Reifenberger, “Ohmic nanocontacts to GaAs using undoped and p-doped layers of low-temperature-grown GaAs”, Appl. Phys. Lett., vol.76, no.2; 10 Jan. 2000; p.212-14. [pdf] doi: 10.1063/1.125705
    27. V. Gopal, V.K. Souw, E-H. Chen, E.P. Kvam, M. McElfresh, J.M. Woodall, “Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP”, J. Appl. Phys., vol.87, no.3; 1 Feb. 2000; p.1350-5. [pdf] doi: 10.1063/1.372062
    28. V. Souw. S. Li, M. McElfresh, Z. Duan, D. McInturff, A. Yulius, E-H. Chen. J.M. Woodall, “Reliable contacts to two-dimensional conduction layers”, Appl. Phys. Lett., vol.76, no.22; 29 May 2000; p.3307-9. [pdf] doi: 10.1063/1.126615
    29. N.P. Chen, H.J. Ueng, D.B. Janes, J.M. Woodall, M.R. Melloch, “A quantitative conduction model for a low-resistance nonalloyed ohmic contact structure utilizing low-temperature-grown GaAs”, J. Appl. Phys. vol.88, no.1; 1 July 2000; p.309-315. [pdf] doi: 10.1063/1.373658
    30. D.B. Janes, M. Batistuta, S. Datta, M.R. Melloch, R.P. Andres, J.Liu, N.P. Chen, T. Lee, R. Reifenberger, E-H. Chen, J.M. Woodall, ” Interface and contact structures for nanoelectronic devices using assemblies of metallic nanoclusters, conjugated organic molecules and chemically stable semiconductor layers”,Superlattices-and-Microstructures.vol.27, no.5-6; 2000; p.555-63. [pdf] doi: 10.1006/spmi.2000.0882
    31. V. Souw, V. Gopal, E-H. Chen, E.P. Kvam, M. McElfresh, J.M. Woodall, ” Growth temperature dependence of transport properties of InAs epilayers grown on GaP”, Appl. Phys. Lett.vol.77, no.8; 21 Aug. 2000; p.1176-8. [pdf] doi: 10.1063/1.1289269
    32. V.Gopal, E-H.Chen, E.P.Kvam, J.M.Woodall, “Electrochemical Capacitance-Voltage Profiling of the Narrow Band Gap Semiconductor InAs”, J. Elect. Mat., 29 (11) Nov. 2000; p. 1333-1339. [pdf] doi: 10.1007/s11664-000-0134-0
    33. J.Liu, T. Lee, D.Janes,  R. Reifenberger, J.M. Woodall, “Guided Self Assembly of Au Nanocluster Arrays Electronically Coupled to Semiconductor Device Layers”,Appl. Phys. Lett., Vol. 77. (3).  17 July 2000; p. 373-375. [pdf] doi: 10.1063/1.126980
    34. D. Janes, T. Lee, J. Liu, M. Batistuta, N-P. Chen, B.L.Walsh. R.P. Andres, E-H. Chen, M.R. Melloch, J.M. Woodall, R. Reifenberger, “Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact application”, J. Electronic-Materials.vol.29, no.5; May 2000; p.565-9. [pdf] doi: 10.1007/s11664-000-0046-z

Top    –    2010-Present    –    2000-2009    –    1990-1999    –    1980-1989    –    1970-1979    –    1960-1969

1990-1999

    1. D.B. Janes, V. Kolagunta, M. Bastistuta, J. Woodall, “Nanoelectronic Device Applications of a Chemically Stable GaAs Structure”, J. Vac. Sci. Technol. B, Vol 17, 1773 (1999). [pdf] doi: 10.1116/1.590824
    2. S. Chaudhuri, P. Bagwell, D. McIntuff, J. Chang, S. Paak, M. Melloch, J. Woodall, T. Pekarek, and B. Crooker, “Is the “Finite Bias Anomaly” in planar GaAs-Superconductor Junctions Caused by Point-contact-like Structures”, Superlattices-Microstructures, Vol. 25, 745 (1999). [pdf] doi: 10.1006/spmi.1999.0758
    3. T. Rizk, A. Yulius, W.Yoo, P. Bagwell, D. McInturff, P. Chin, J. Woodall, T. Pekarek, and T. Jackson, “Ballistic Transport and Andreev Resonances in Nb/In Superconducting Contacts to InAs and LTG-GaAs” Superlattices-and-Microstructures Vol. 25, 757 (1999). [pdf] doi: 10.1006/spmi.1999.0757
    4. K. Shiojima, D. McInturff, J. Woodall, P. Grudowsik, C. Eiting, R. Dupuis, “Electrical Characteristics and Thermal Stability of W, WSiN, and Nb Contacts to p- and n- type GaN”, J. Elect. Mat., Vol. 28, 228 (1999). [pdf] doi: 10.1007/s11664-999-0019-9
    5. K. Shiojima, J. Woodall, C. Eiting, P. Grudowski, R. Dupuis, “Effect of Defect Density on the Electrical Characteristics of n-type GaN Schottky Contacts”, J. Vac. Sci.Technol. B Vol. 17, 2030 (1999). [pdf] doi: 10.1116/1.590866
    6. V. Gopal, E-H. Chen, E. Kvam, and J. Woodall, “Behavior of a New Ordered Structural Dopant Source in InAs/GaP Heterostructures”, J. Vac. Sci. Technol. B Vol. 17, 1767 (1999). [pdf] doi: 10.1116/1.590823
    7. C. Chen, M. Hargis, J. Woodall, M. Melloch, J. Reynolds, E. Yablonovitch, and W. Wang, “GHz Bandwidth GaAs LEDs”, Appl. Phys. Lett, Vol.74 3140 (1999). [pdf] doi: 10.1063/1.124092
    8. T. Lee, J.Liu, D.Janes, V. Kolagunta, J. Dicke, R. Andres, J. Lauderbach, M. Melloch, D. McInturff, J. Woodall, and R. Reifenberger, “An Ohmic Nanocontact to GaAs”, Appl, Phys. Lett. Vol. 74, 2869 (1999). [pdf] doi: 10.1063/1.124041
    9. T. Holden, W.D. Sun, F.H. Pollak, J.L. Freeouf, D. McInturff, J.M. Woodall, “Reflection anisotropy spectroscopy study of the near-surface electric fields in undoped, n- and p-doped low-temperature grown GaAs (001)”, Physical-Review-B-(Condensed-Matter).vol.58, no.12; 15 Sept. 1998; p.7795-8. [pdf] doi: 10.1103/PhysRevB.58.7795
    10. K.P. Schoen, J.M. Woodall, J.A. Cooper, M.R. Melloch, “Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers”, IEEE-Transactions-on-Electron-Devices.vol.45, no.7; July 1998; p.1595-604. [pdf] doi: 10.1109/16.701494
    11. J.A. Cooper Jr, M.R. Melloch, J.M. Woodall, J. Spitz. K.J. Schoen, J.P. Henning, “Recent advances in SiC power devices”, Materials-Science-Forum.vol.264-268, pt.2; 1998; p.895-900.
    12. K.J. Schoen, J.M. Woodall, J.A. Cooper, M.R. Melloch, “Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers”, IEEE-Transactions-on-Electron-Devices.vol.45, no.7; July 1998; p.1595-604.
    13. V. Gopal, E. P. Kvam, T. P. Chin,  and J. M. Woodall, “Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface” Appl. Phys. Lett. 72 (1998) 2319. [pdf] doi: 10.1063/1.121348
    14. R. Leon, C. Lobo, T. P. Chin, J. M. Woodall, S. Fafard, S. Ruvimov, Z. Liliental-Weber, and M. A. Stevens Kalceff, “Self-forming InAs/GaP quantum dots by direct island growth” Appl. Phys. Lett. 72 (1998) 1356-1358. [pdf] doi: 10.1063/1.121070
    15. D. D. Nolte, I. Lahiri, R. Guersen, M. R. Melloch and J. M. Woodall, “Enhanced Diffusion in Nonstoichiometric AlAs/GaAs Heterostructures” Diffusion and Defect Forum Volumes 157-159 (1998) pp 1-16.
    16. K. J. Schoen, J. P. Henning, J. M. Woodall, J. A. Cooper, Jr., and M. R. Melloch, “A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC” IEEE Electron Device Letters, Letters.vol.19, no.4; April 1998; p.97-9. [pdf] doi: 10.1109/55.663526
    17. J.P. Henning, K. J. Schoen, M. R. Melloch, J. M. Woodall, and J. A. Cooper, Jr., “Electrical Characteristics of Rectifying Polycrystalline Silicon/Silicon Carbide Heterojunctions”, J. Electronic-Materials.vol.27, no.4; April 1998; p.296-9. [pdf] doi: 10.1007/s11664-998-0403-x
    18. S. Ahmed, M. R. Melloch, E. S. Harmon, D. T. McInturff, and J. M. Woodall, “Use of nonstoichiometry to form GaAs tunnel junctions” Appl. Phys. Lett. 71 (1997) 3667-3669. [pdf] doi: 10.1063/1.120475
    19. H. Alawadhi, R. Vogelgesang, A. K. Ramdas, T. P. Chin and J. M. Woodall, “Indirect transitions, free and impurity-bound excitons in gallium phosphide: A revisit with modulation and photoluminescence spectroscopy” J. Appl. Phys. 82 (1997) 4331-4337. [pdf] doi: 10.1063/1.366241
    20. S. Ahmed, M. R. Melloch, D. T. McInturff, J. M. Woodall and E.S. Harmon, “Low-temperature grown GaAs tunnel junctions” Electronics Letters 33, August 1997, p. 1585-1587. [pdf] doi: 10.1049/el:19971047
    21. K. J. Schoen, E. S. Harmon, J. M. Woodall, and T. P. Chin, “High voltage GaInP/GaAs dual-material Schottky rectifiers” Appl. Phys. Lett. 71 (1997) 518.[pdf] doi: 10.1063/1.119596
    22. K. J. Schoen, J. M. Woodall, A. Goel, and C. Venkatraman, “Electrical properties of metal-diamond-like-nanocomposite (Me-DLN) contacts to 6H SiC” J. of Electronic Materials, 26 (1997) 193-197. [pdf] doi: 10.1007/s11664-997-0149-x
    23. T. M. Pekarek, B. C. Crooker, S. Li, M. McElfresh, J. C. P. Chang, D. McInturff, E. S. Harmon, M. R. Melloch, and J. M. Woodall, “Magnetic and magnetoresistance measurements on iron-based nanoclusters in In0.53Ga0.47As,” J. Appl. Phys. 81 (1997) 4869. [pdf] doi: 10.1063/1.364861
    24. T. M. Pekarek, B. C. Crooker, J. Deak, M. McElfresh, D. D. Nolte, J. C. P. Chang, E. S. Harmon, M. R. Melloch, and J. M. Woodall, “Superparamagnetic Behavior of Fe3GaAs Precipitates in GaAs” Journal of Magnetism and Magnetic Materials 169 (1997) 261-270. [pdf] doi: 10.1016/S0304-8853(96)00753-6
    25. T. Holden, F. H. Pollak, J. L. Freeouf, D. McInturff, J. L. Gray, M. S. Lundstrom and J. M. Woodall, “Reflection Anisotropy Spectroscopy Study of the Near Surface Electric Field in Low-temperature Grown GaAs (001),” Appl. Phys. Lett. 70 (1997) 1107. [pdf] doi: 10.1063/1.118499
    26. E. H. Chen, T. P. Chin, J. M. Woodall, and M. S. Lundstrom, “Electrical Characteristics of Nearly-Relaxed InAs/GaP Heterojunctions,” Appl. Phys. Lett. 70 (1997) 1551. [pdf] doi: 10.1063/1.118614
    27. L. Chen, T.P. Chin, J.M. Woodall, G.I. Haddad, “InP/InGaAs single heterojunction bipolar transistors grown by solid-source molecular beam epitaxy using a phosphorus valved cracker”, Journal-of-Vacuum-Science-&-Technology-B-(Microelectronics-and-Nanometer-Structures).vol.14, no.4; July-Aug. 1996; p.2739-41. doi: 10.1116/1.589012
    28. B. G. Briner, R. M. Feenstra, T. P. Chin, and J. M. Woodall, “Local transport properties of thin bismuth films studied by scanning tunneling potentiometry” Phys. Rev. B54 (1996) R5283. [pdf] doi: 10.1103/PhysRevB.54.R5283
    29. B. G. Briner, R. M. Feenstra, T. P. Chin, and J. M. Woodall “Growth and transport properties of thin Bi films on InP(110)” Semicond. Sci. Technol. 11 (1996) 1575-1581. [pdf] doi: 10.1088/0268-1242/11/11S/021
    30. J. C. P. Chang, T. P. Chin, and J. M. Woodall, “Incoherent interface of InAs grown directly on GaP (001),” Appl. Phys. Lett. 69, (1996) 981. [pdf] doi: 10.1063/1.117102
    31. M. R. Melloch, D. D. Nolte, J. M. Woodall, J. C. P. Chang, D. B. Janes, and E. S. Harmon “Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems,” Critical Reviews in Solid State and Materials Sciences, 21(3) (1996) 189-263. doi: 10.1080/10408439608241256
    32. T. B. Ng, D. B. Janes, D. McInturff and J. M. Woodall, “Inhibited Oxidation in Low-Temperature Grown GaAs Surface Layers Observed by Xray Photoelectron Spectroscopy,” Appl. Phys. Lett. 69 (1996) 3551. [pdf] doi: 10.1063/1.117242
    33. D. T. McInturff, E. S. Harmon, J. C. P. Chang, T. M. Pekarek, and J. M. Woodall, “The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy,” Appl. Phys. Lett. 69 (1996) 1885. [pdf] doi: 10.1063/1.117466
    34. S. E. Ralph, Y. Chen, J. Woodall and D. McInturff, “Subpicosecond photoconductivity ofIn0.53Ga0.47As: Intervalley scattering rates observed via THz spectroscopy,” Phys. Rev. B 54(8), (1996) 5568-5573. [pdf] doi: 10.1103/PhysRevB.54.5568
    35. J. C. P. Chang, T. P. Chin, and J. M. Woodall, “Incoherent interface of InAs grown directly on GaP(100),” Appl. Phys. Lett. 69 (1996) 981. [pdf] doi: 10.1063/1.117102
    36. I. Lahiri, D. D. Nolte, M. R. Melloch, J. M. Woodall, and W. Walukiewicz, “Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations,” Appl. Phys. Lett. 69(2) (1996) 239.[pdf] doi: 10.1063/1.117936
    37. M. V. Tagare, T. P. Chin, and J. M. Woodall, “Heavy Be doping of GaP and InxGa1-xP,” J. Vac. Sci. and Technol. B14(3) (1996) 2325. [pdf] doi: 10.1116/1.588851
    38. T. P. Chin, J. C. P. Chang, J. M. Woodall, W. L. Chen, and G. I. Haddad “InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker,” J. Vac. Sci. Technol. B14(3) (1996) 2225. [pdf] doi: 10.1116/1.588905
    39. M. V. Tagare, T. P. Chin and J. M. Woodall, “Non-alloyed Ohmic Contacts to Heavily Be-doped GaP and InxGa1-xP,” Appl. Phys. Lett. 68(24) (1996) 3485. [pdf] doi: 10.1063/1.115766
    40. E. H. Chen, D. T. McInturff, T. P. Chin, M. R. Melloch, and J. M. Woodall, “Use of Annealed Low-temperature Grown GaAs as a Selective Photoetch-stop Layer,” Appl. Phys. Lett. 68, (1996) 1678. [pdf] doi: 10.1063/1.115903
    41. P. E. Dodd, M. L. Lovejoy, M. S. Lundstrom, M. R. Melloch, J. M. Woodall, and D. Pettit, “Demonstration of npn InAs Bipolar Transistors with Inverted Base Doping,” Electron Device Letts. 17, (1996) 166. [pdf] doi: 10.1109/55.485162
    42. S. Hong, D. B. Janes, D. McInturff, R. Reifenberger and J. M. Woodall, “Stability of a Low-Temperature Grown GaAs Surface Layer Following Air Exposure Using Tunneling Microscopy,” Appl. Phys. Lett. 68 (1996) 2258. [pdf] doi: 10.1063/1.115877
    43. M. R. Melloch, I. Lahiri, D. D. Nolte, J. C. P. Chang, E. S. Harmon, J. M. Woodall, N. Y. Li, and C. W. Tu, “Molecular-Beam Epitaxy of High-Quality, Non-Stoichiometric Multiple Quantum Wells,” J. of Vac. Sci. and Technol. B14(3) 2271 (1996). [pdf] doi: 10.1116/1.588917
    44. M. C. Hargis, S. E. Ralph, J. M. Woodall, D. McInturff, A. Negri, and P. Haugsjaa, “Temporal and Spectral Characteristics of Back Illuminated InGaAs Metal-Semiconductor-Metal Photodetectors,” IEEE Photonics Technology Letters, 8 (1996) p. 110-112. [pdf] doi: 10.1109/68.475795
    45. M.R Melloch, J.M. Woodall, E.S. Harmon, N. Otsuka, F.H. Pollak, D.D. Nolte, R.M Feenstra and M. A. Lutz, “Low Temperature Grown III-V Materials”, Annual Review of Materials Science, vol. 25, (1995), pp. 547-600. [pdf] doi: 10.1146/annurev.ms.25.080195.002555
    46. M. R. Melloch and J. M. Woodall, “Comment on Mechanism Responsible for the Semi-Insulating Properties of Low-Temperature-Grown GaAs,”[Appl. Phys. Lett. 65, 3002 (1994)] Appl. Phys. Lett., 67 (1995), pp. 1331-1332. [pdf] doi: 10.1063/1.114530
    47. I. Lahiri, D. D. Nolte, J. C. P. Chang, J. M. Woodall, and M. R. Melloch, “The role of excess arsenic in interface mixing in low-temperature-grown AlAs/GaAs superlattices,” Appl. Phys. Lett., 67 (1995), pp. 1244-1246. [pdf] doi: 10.1063/1.114385
    48. E. B. Cohen, D. B. Janes, K. J. Webb, J. N. Shenoy, J. M. Woodall, and M. R. Melloch, “A 2DEG/Low-Temperature-Grown GaAs Dual Channel Heterostructure Transistor,” Superlattices and Microstructures, 17 (1995) 345-349. [pdf] doi: 10.1006/spmi.1995.1061
    49. J. C. P. Chang, J. M. Woodall, M. R. Melloch, I. Lahiri, D. D. Nolte, N. Y. Li, and C. W. Tu, “Investigation of Interface Intermixing and Roughening in Low-Temperature-Grown AlAs/GaAs Multiple Quantum Wells During Thermal Annealing by Chemical Lattice Imaging and X-Ray Diffraction,” Appl. Phys. Lett. 67 (1995) 3491-3493. [pdf] doi: 10.1063/1.115257
    50. D. Yan, F. H. Pollak, T. P. Chin, and J. M. Woodall, “In Situ study of fermi-level pinning on n- and p-type GaAs (001) grown by molecular-beam epitaxy using photoreflectance,” Phys. Rev. B, 52, (1995) 4674-4676. [pdf] doi: 10.1103/PhysRevB.52.4674
    51. M. Hargis, S. E. Ralph, J. M. Woodall and D. McInturff, “Hole Dominated Transport in InGaAs Metal Semiconductor Metal Photodetectors” Appl. Phys. Lett., 67 (1995), pp. 413-415. [pdf] doi: 10.1063/1.114646
    52. V. Mahadev, M. R. Melloch, J. M. Woodall, N. Otsuka, and G. L. Liedl, “Effect of Dopants on Arsenic Precipitation in GaAs Deposited at Low Temperatures,” J. of Electronic Materials 23 (1994), pp. 1015-1020. [pdf] doi: 10.1007/BF02650369
    53. N. Atique, E. S. Harmon, J. C. P. Chang, J. M. Woodall, M. R. Melloch, and N. Otsuka, “Electrical and Structural Properties of Be- and Si-doped Low-Temperature-Grown GaAs,” J. Appl. Phys. 77 (1995), pp. 1471-1476. [pdf] doi: 10.1063/1.358895
    54. I. Lahiri, D. D. Nolte, E. S. Harmon, M. R. Melloch, and J. M. Woodall, “Ultrafast-Lifetime Quantum Wells with Sharp Exciton Spectra,” Appl. Phys. Lett., 66 (1995), pp. 2519-2521. [pdf] doi: 10.1063/1.113153
    55. T. P. Chin, J. C. P. Chang, J. M. Woodall, W. L. Chen, G. I. Haddad, C. Parks and A. K. Ramdas, “Operation and Device Applications of a Valved-Phosphorus Cracker in Solid-Source Molecular-Beam Epitaxy” J. Vac. Sci. Technol. B, 13, Mar/Apr. (1995), pp. 750-753. [pdf] doi: 10.1116/1.588154
    56. E. S. Harmon, D. T. McInturff, M. R. Melloch, and J. M. Woodall, “Novel GaAs Photodetector with Gain for Long Wavelength Detection,” J. Vac. Sci. Technol. B, Mar./Apr. 1995, pp. 768-770. [pdf] doi: 10.1116/1.588159
    57. M. P. Patkar, T. P. Chin, J. M. Woodall, M. S. Lundstrom, and M. R. Melloch, “Very Low Resistance Non-Alloyed Ohmic Contacts Using Low Temperature Molecular Beam Epitaxy of GaAs,” Appl. Phys. Lett. 66, (1995) pp. 1412-1414.[pdf] doi: 10.1063/1.113218
    58. J. C. P. Chang, N. Otsuka, E. S. Harmon, M. R. Melloch, and J. M. Woodall, “Precipitation in Fe or Ni-Implanted and Annealed GaAs,” Appl. Phys. Lett. 65, (1994) 2801. [pdf] doi: 10.1063/1.112570
    59. W.-S. Chi, Y-S. Huang, H. Qiang, F. H. Pollak, D. G. Pettit, and J. M. Woodall, “Temperature Dependence of Quantized States in Strained-Layer In0.21Ga0.79As/GaAs Single Quantum Well,” Jpn. J. Appl. Phys., 33 (1994), pp. 966-970. [pdf] doi: 10.1143/JJAP.33.966
    60. S. Tiwari, G. D. Pettit, R. J. Davis, and J. M. Woodall, “High Efficiency and Low Threshold Current Strained V-Groove Quantum-Wire Lasers,” Appl. Phys. Lett., 64 (1994), p. 3536. [pdf] doi: 10.1063/1.111264
    61. M.O.Aboelfotoh, S. Oktyabrsky, J. Narayan, and J.M. Woodall, “Microstructure Characterization of Cu3Ge/ n-type GaAs Ohmic Contacts”,  J. Appl. Phys., 76, (1994) p.  5760. [pdf] doi: 10.1063/1.358386
    62. M. O. Aboelfotoh, C. L. Lin, and J. M. Woodall, “Novel low-resistance ohmic contact to n-type GaAs using Cu3Ge,” Appl. Phys. Lett. 65, (1994) 3245. [pdf] doi: 10.1063/1.112426
    63. S. Tiwari and J. M. Woodall, “Experimental Comparison of Strained Quantum-Wire and Quantum Well Laser Characteristics,” Appl. Phys. Lett., 64 (1994), p. 2211. [pdf] doi: 10.1063/1.111676
    64. R. M. Feenstra, J. M. Woodall, and G. D. Pettit, “Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAs,” Materials Science Forum, Vols. 143-147 (1994), pp. 1311-1318. [pdf] doi: 10.4028/www.scientific.net/MSF.143-147.1311
    65. D. Yan, E. Look, X. Yin, F. H. Pollak, and J. M. Woodall, “Air Stabilized (001) p-type GaAs Fabricated by Molecular Beam Epitaxy with Reduced Surface State Density,” Appl. Phys. Lett. 65 (1994), p. 186. [pdf] doi: 10.1063/1.113035
    66. A. Rahman, D. Kralj, L. Carin, M. R. Melloch, and J. M. Woodall, “Photoconductively Switched Antennas for Measuring Target Resonances,” Appl. Phys. Lett., 64 (1994), p. 2178. [pdf] doi: 10.1063/1.111668
    67. R. M. Feenstra, J. M. Woodall, and G. D. Pettit, “Observation of Bulk Defects by Scanning Tunneling Microscopy and Spectroscopy: Arsenic Antisite Defects in GaAs,” Phys. Rev. Lett., 71 (8) 1993, p. 1176. [pdf] doi: 10.1103/PhysRevLett.71.1176
    68. A. Vaterlaus, R. M. Feenstra, P. D. Kirchner, J. M. Woodall, and G. D. Pettit, “Cross-sectional scanning tunneling microscopy of epitaxial GaAs structures,” J. Vac. Sci. & Tech. B, Vol. 11, Jul./Aug. 1993, p. 1502. [pdf] doi: 10.1116/1.586959
    69. J. H. Chen, W. S. Chi, Y. S. Huang, Y. Yin, F. H. Pollak, G. D. Pettit, and J. M. Woodall, “Photomodulation study of partially strained InxGa1-xAs layers,” Semicond. Sci. Technol., 8 (1993), pp. 1420-1425. [pdf] doi: 10.1088/0268-1242/8/7/036
    70. A. Raisanen, I. M. Vitomirov, L. J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Control of As diffusion using ultrathin metal passivating layers at GaAs(100) surfaces,” J. Vac. Sci. Technol. A, 11(4), July/Aug. 1993, p. 1106. [pdf] doi: 10.1116/1.578449
    71. I. M. Vitomirov, A. Raisanen, L. J. Brillson, C. L. Lin, D. T. McInturff, P. D. Kirchner, and J. M. Woodall, “Temperature-dependent composition, ordering, and band bending at GaP(100) surfaces,” J. Vac. Sci. Technol. A, 11(4), July/Aug. 1993, p. 841. [pdf] doi: 10.1116/1.578315
    72. M. R. Melloch, K. Mahalingam, N. Otsuka, J. M. Woodall, and A. C. Warren, “Comment on Arsenic precipitate coarsening in GaAs epilayers,” Philosophical Magazine A, Vol. 67, (1993), pp. 1495-1496. doi: 10.1080/01418619308225369
    73. M. R. Melloch, D. D. Nolte, N. Otsuka, C. L. Chang, and J. M. Woodall, “Arsenic cluster engineering for excitonic electro-optics,” J. Vac. Sci. Technol., B 11(3), May/June 1993, p. 795. [pdf] doi: 10.1116/1.586791
    74. R. C. Gee, C. L. Lin, C. W. Farley, C. W. Seabury, J. A. Higgens, P. D. Kirchner, J. M. Woodall, and P. M. Asbeck, “InP/InGaAs Double Heterojunction Bipolar Transistors Incorporating Carbon-Doped Bases and Superlattice Graded Base-Collector Junctions,” Electronics Letters, 13 May 1993, Vol. 29, No. 10, pp. 850-851. [pdf] doi: 10.1049/el:19930568
    75. L. Carin, D. R. Kralj, M. R. Melloch, and J. M. Woodall, “Characterization of Planar Antennas Fabricated on GaAs Epilayers Containing As Clusters for Picosecond Short-Pulse Application,” IEEE Microwave and Guided Wave lett., 3, 339 (1993).[pdf] doi: 10.1109/75.244872
    76. M. R. Melloch, J. M. Woodall, N. Otsuka, K. Mahalingam, C. L. Chang, D. D. Nolte, and G. D. Pettit, “GaAs, AlGaAs, and InGaAs Epilayers Containing As Clusters: Semimetal/Semiconductor Composites,” Mat. Sci. Eng. B., 22 (1993) p. 31-36.INVITED [pdf] doi: 10.1016/0921-5107(93)90219-D
    77. R. M. Feenstra, A. Vaterlaus, J. M. Woodall, and G. D. Pettit, “Tunneling Spectroscopy of Midgap States Induced by Arsenic Precipitates in LT GaAs,” Appl. Phys. Lett., 63, 2528, 1993. [pdf] doi: 10.1063/1.110448
    78. J. M. Woodall, P. D. Kirchner, J. L. Freeouf, D. T. McInturff, M. R. Melloch, and F. H. Pollak, “The Continuing Drama of the Semiconductor Interface,” Proc. Royal Society, Phil. Trans. R. Soc. Lond. A. (1993) 344, p. 521-532. INVITED. [pdf] doi: 10.1098/rsta.1993.0105
    79. C. L. Chang, K. Mahalingam, N. Otsuka, M. R. Melloch, and J. M. Woodall, “Precipitation of Arsenic in Doped GaAs,” J. Electron. Materials, 22(12) (1993) 1413-1416. [pdf] doi: 10.1007/BF02649988
    80. E.S. Harmon, M.R. Melloch, D.D. Nolte, N. Otsuka, C.L. Chang, “ Carrier Lifetime versus anneal in Low Temperature Growth GaAs”, Appl. Phys. Lett., 63 (1993) p. 2248. [pdf] doi: 10.1063/1.110542
    81. *E. S. Harmon, M. L. Lovejoy, M. R. Melloch, M. S. Lundstrom, T. J. de Lyon, and J. M. Woodall, “Experimental Observation of a Minority Electron Mobility Enhancement in Degenerately Doped p-Type GaAs,” Appl. Phys. Lett., 63, 536, 1993. [pdf] doi: 10.1063/1.109997
    82. R. J. Matyi, M. R. Melloch, and J. M. Woodall, “Structural Analysis of As-Deposited and Annealed Low Temperature-GaAs,” J. Crystal Growth, 129, 719, 1993. [pdf] doi: 10.1016/0022-0248(93)90508-T
    83. I. M. Vitomirov, A. Raisanen, A. C. Finnefrock, R. E. Viturro, L. J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Geometric Ordering, Surface Chemistry, Band Bending, and Work Function at Decapped GaAs(100) Surfaces,” Phys. Rev. B. 46, 13293, 1992. [pdf] doi: 10.1103/PhysRevB.46.13293
    84. T. P. Chin, J. C. P. Chang, K. L. Kavanagh, C. W. Tu, P. D. Kirchner, and J. M. Woodall, “Gas-Source Molecular Beam Epitaxial Growth, Characterization, and Light-Emitting Diode Application of InxGa1-xP on GaP (100),” Appl. Phys. Lett., 62, 1993, p. 2369. [pdf] doi: 10.1063/1.109367
    85. D. T. McInturff, J. M. Woodall, A. C. Warren, N. Braslau, G. D. Pettit, P. D. Kirchner, and M. R. Melloch, “Photoemission Spectroscopy of Al0.27Ga0.73As:As Photodiodes,” Appl. Phys. Lett., 62, 1993, p. 2367. [pdf] doi: 10.1063/1.109392
    86. M. R. Melloch, C. L. Chang, N. Otsuka, K. Mahalingam, J. M. Woodall and P. D. Kirchner, “Two-Dimensional Arsenic-Precipitate Structures in GaAs” J. Crystal Growth, 127, 1993, p. 499. [pdf] doi: 10.1016/0022-0248(93)90669-N
    87. *D. D. Nolte, M. R. Melloch, J. M. Woodall, and S. J. Ralph, “Enhanced Electro-optic Properties of LT-GaAs and AlGaAs,” Appl. Phys. Lett., 62, 1993, p. 1356.[pdf] doi: 10.1063/1.108677
    88. X. Yin, X. Guo, F. H. Pollak, G. D. Pettit, D. T. McInturff, J. M. Woodall and E-H. Cirlin, “Contactless Electromodulation for In-Situ Characterization of Semiconductor Processing,” Appl. Surf. Sci., 63, 1993, p. 163. [pdf] doi: 10.1016/0169-4332(93)90082-M
    89. *K. L. Kavanagh, J. C. P. Chang, P. D. Kirchner, A. C. Warren, and J. M. Woodall, “Si Diffusion and Segregation in Low-Temperature Grown GaAs,” Appl. Phys. Lett., 62, 286 (1993). [pdf] doi: 10.1063/1.108992
    90. L. J. Brillson, I. M. Vitomirov, A. Raisanen, S. Chang, R. E. Viturro, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Electronic Structure of Metal/Semiconductor Interfaces from Cathodoluminescence and Soft X-ray Photoemission Spectroscopies,” Appl. Surf. Sci. 65/66, p. 667-675, 1993. [pdf] doi: 10.1016/0169-4332(93)90737-V
    91. I. M. Vitomirov, A. Raisanen, S. Chang, R. E. Viturro, L. J. Brillson, D. F. Rioux, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Effect of Semiconductor Growth Method and Bulk Doping on Fermi Level Stabilization for Aluminum and Gold Contacts on n- and p-GaAs(100),” J. of Electronic Mat. 22, p. 111-117, 1993.
    92. I. M. Vitomirov, A. Raisanen, L. J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Processing and Reconstruction Effects on Al-GaAs(100) Barrier Heights,” J. of Electronic Mat. 22, p. 309-313, 1993.
    93. *D. D. Nolte, M. R. Melloch, S. J. Ralph and J. M. Woodall, “High Density Optical Storage based on Nano-size Arsenic Clusters in Low-Temperature-Growth GaAs,” Appl. Phys. Lett., 61, 1992, p. 3098.
    94. *D. Yan, F. H. Pollak, V. T. Boccio, C. L. Lin, P. D. Kirchner, J. M. Woodall, R. C. Gee and P. M. Asbeck, “Photoreflectance Characterization of an InP/GaInAs Heterojunction Bipolar Transistor Structure,” Appl. Phys. Lett., 61, 1992, p. 2066.
    95. M. R. Melloch, N. Otsuka, K. Mahalingam, C. L. Chang, J. M. Woodall, G. D. Pettit, P. D, Kirchner, F. Cardone, and A. C. Warren, “As Cluster Dynamics in Doped GaAs,” J. Appl. Phys., 72, 1 (1992).
    96. S. Chang, A. Raisanen, L. J. Brillson, J. L. Shaw, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Inhomogeneous and Wide Range of Barrier Heights at Metal/MBE GaAs(100) Interfaces Observed with Electrical Measurements,” J. Vac. Sci. Technol., B 10(4), 1932 (1992).
    97. I. M. Vitomirov, A. D. Raisanen, A. C. Finnefrock, R. E. Viturro, L. J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Temperature-dependent Chemical and Electronic Structure of Reconstructed GaAs (100) Surfaces,” J. Vac. Sci. Technol., B 10(4), 1898 (1992).
    98. *A. C. Warren, J. M. Woodall, P. D. Kirchner, X. Yin, X. Guo, F. H. Pollak, and M. R. Melloch, “Electromodulation Study of GaAs with Excess Arsenic,” J. Vac. Sci. Technol., B 10 (4), 1992, p. 1904.
    99. *M. L. Lovejoy, M. R. Melloch, M. S. Lundstrom, B. M. Keyes, R. K. Ahrenkiel, T. J. de Lyon, and J. M. Woodall, “Comparative Study of Minority Electron Properties in p+/GaAs Doped with beryllium and carbon,” Appl. Phys. Lett., 61, 1992, p. 822.
    100. *R. M. Feenstra, E. T. Yu, J. M. Woodall, P. D. Kirchner, C. L. Lin, and G. D. Pettit, “Cross-sectional Imaging and Spectroscopy of GaAs doping Superlattices by Scanning Tunneling Microscopy,” Appl. Phys. Lett., 61, 1992, p. 795.
    101. *A. C. Warren, J. M. Woodall, P. D. Kirchner, X. Yin, F. Pollak, M. R. Melloch, N. Otsuka and K. Mahalingam, “Role of Excess As in Low-Temperature Grown GaAs,” Phys. Rev. B., 46, 1992, p. 4617.
    102. I. M. Vitomirov, A. D. Raisanen, A. C. Finnefrock, R. E. Viturro, S. Chang, L. J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Surface and Interface States for GaAs(100) (1×1) and (4×2)-c(8×2) Reconstructions,” J. Vac. Sci. Technol., A 10(4), 1992, p. 749.
    103. *M. R. Melloch, N. Otsuka, K. Mahalingam, C. L. Chang, P. D. Kirchner, J. M. Woodall, and A. C. Warren, “Formation of 2-D Arsenic-Precipitate Structures in GaAs,” Appl. Phys. Lett., 61, 1992, p. 177.
    104. S. Chang, I. M. Vitomirov, L. J. Brillson, C. Mailhiot, D. F. Rioux, Y. J. Kime, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Chemical and Electronic Properties of Al and Au/Vicinal GaAs (100) Interfaces,” Phys. Rev. B, 45, 13, 1992, p. 438.
    105. *K. Mahalingam, N. Otsuka, M. R. Melloch, J. M. Woodall, “Arsenic Precipitates in Al0.3Ga0.7As/GaAs Multiple Superlattice and Quantum Well Structures,” Appl. Phys. Lett., 60, 1992, p. 3253.
    106. R. E. Viturro, M. R. Melloch, and J. M. Woodall, “Optical Emission Properties of Semi-insulating GaAs Grown at Low Temperatures by Molecular Beam Epitaxy,” Appl. Phys. Lett., 60, 1992, p. 3007.
    107. R. J. Matyi, M. R. Melloch, and J. M. Woodall, *”High Resolution X-Ray Diffraction Analysis of Annealed Low-Temperature GaAs,” Appl. Phys. Lett., 60, 2642 (1992).
    108. T. J. de Lyon, J. M. Woodall, J. A. Kash, D. T. McInturff, R. J. S. Bates, P. D. Kirchner, and F. Cardone, “Minority Carrier Lifetime and Photoluminescent Response of Heavily Carbon-doped GaAs Grown with Gas Source MBE Using Halomethane Doping Sources,” J. Vac. Sci. Technol., B 10(2), 1992, p. 846.
    109. H. Qiang, F. H. Pollak, C. Mailhiot, G. D. Pettit and J. M. Woodall, “Uniaxial Stress Study of the Quantum Transitions in a Strained Layer (001) In0.21Ga0.79As/GaAs Single Quantum Well,” Surface Science, 267, 1992, p. 103.
    110. *R. C. Gee, T-P. Chin, C. W. Tu, P. M. Asbeck, C. L. Lin, P. D. Kirchner, and J. M. Woodall, “InP/InGaAs Heterojunction Bipolar Transistors Grown by Gas Source Molecular Beam Epitaxy with Carbon-Doped Base,” IEEE Electron Device Lett., 13, 1992, p. 247.
    111. K. Mahalingam, N. Otsuka, M. R. Melloch, J. M. Woodall and A. C. Warren, “Arsenic Precipitate Accumulation and Depletion Zones at AlGaAs/GaAs Heterojunctions Grown at Low Substrate Temperature by Molecular Beam Epitaxy,” J. Vac. Sci. Technol., B 10(2), 1992, p. 812.
    112. X. Yin, X. Guo, F. H. Pollak, G. D. Pettit, J. M. Woodall, T. P. Chin and C. W. Tu, “Nature of Band Bending at Semiconductor Surfaces by Contactless Electroreflectance,” Appl. Phys. Lett., 60, 1992, p. 1336.
    113. J. H. Burroughes, M. S. Milshtein, G. D. Pettit, N. Pakdaman, H. Heinrich, and J. M. Woodall, “The Frequency Behaviour of InGaAs/AlInAs Metal Semiconductor Metal Photodetectors at Low Bias Voltages, for Data Communication Applications,” IEEE Photon. Technol., Lett., 4, 1992, p. 163.
    114. *X. Yin, H-M. Chen, F. H. Pollak, Y. Chan, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Photoreflectance Study of the Surface Fermi Level at (001) n- and p-Type GaAs Surfaces,” J. Vac. Sci. Technol., A 10 (1), 1992, p. 131.
    115. *D. T. McInturff, J. M. Woodall, A. C. Warren, N. Braslau, G. D. Pettit, P. D. Kirchner, and M. R. Melloch, “Photoemission Spectroscopy of GaAs:As PIN Photodiodes,” Appl. Phys. Lett., 60, 1992, p. 448.
    116. T. J. de Lyon, J. M. Woodall, D. T. McInturff, R. J. S. Bates, J. A. Kash, P. D. Kirchner, and F. Cardone, “Doping Concentration Dependence of Radiance and Optical Modulation Bandwidth in Carbon-doped Ga0.51In0.49P/GaAs light-emitting Diodes Grown by Gas Source MBE,” Appl. Phys. Lett., 60, 1992, p. 353.
    117. Y. S. Huang, H. Qiang, F. H. Pollak, G. D. Pettit, P. D. Kirchner, J. M. Woodall, H. Stragier, and L. B. Sorensen, “Temperature Dependence of the Photoreflectance of a Strained Layer In0.21Ga0.79As/GaAs Single Quantum Well,” J. Appl. Phys., 70, 1991, p. 7537.
    118. J. A. Silberman, T. J. deLyon, and J. M. Woodall, “Fermi Level Pinning at Epitaxial Si on GaAs (100) Interfaces,” Appl. Phys. Lett., 59, 3300 (1991).
    119. J. L. Freeouf, J. M. Woodall, and C. B. Duke, “Comment on `Electronic Structure of Ideal Metal/GaAs Contacts’,” Phys. Rev. Lett., 67, 1991, p. 2745.
    120. *D. V. Rossi, J.-I. Song, E. R. Fossum, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “A Resistive-Gate In0.53Ga0.47As/InP Heterostructure CCD,” IEEE Elect. Dev. Lett., 12, 1991, p. 688.
    121. *T. P. Chin, P. D. Kirchner, J. M. Woodall, C. W. Tu, “Highly Carbon-Doped P-Type InGaAs and InGaP by Carbon Tetrachloride in Gas Source MBE,” Appl. Phys. Lett., 59, 1991, p. 2865.
    122. H. Qiang, F. H. Pollak, C. Mailhiot, G. D. Pettit, and J. M. Woodall, “Externally Generated Piezoelectric Effect in Semiconductor Microstructures,” Phys. Rev. B, 44, 1991, p. 9126.
    123. *A. C. Warren, J. H. Burroughes, J. M. Woodall, D. T. McInturff, R. T. Hodgson, and M. R. Melloch, “1.3 Micron PiN Photodetector Using GaAs with As Precipitates (GaAs:As),” IEEE Elect. Dev. Lett., 12, 1991, p. 527.
    124. *X. Yin, H-M. Chen, F. H. Pollak, Y. Cao, P. A. Montano, P. D. Kirchner, G. D. Pettit and J. M. Woodall, “In-situ Photoreflectance Study of the Effects of Sputter Annealing on the Fermi Level at (001) n- and p- type GaAs Surface,” J. Vac. Sci. Technol., B 9 (4), 1991, p. 2114.
    125. S. Chang, I. M. Vitomirov, L. J. Brillson, D. F. Rioux, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Increased Range of Fermi-Level Stabilization Energy at at Metal/Melt Grown GaAs (100) Interfaces),” J. Vac. Sci. Technol., B 9 (4), 1991, p. 2129.
    126. *K. Mahalingam, N. Otsuka, M. R. Melloch, J. M. Woodall, and A. C. Warren, “Substrate Temperature Dependence of Arsenic Precipitate Formation in GaAlAs and GaAs, J. Vac. Sci. Technol., B 9 (4), 1991, p. 2328.
    127. S. Chang, I. M. Vitomirov, L. J. Brillson, D. F. Rioux, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Correlation of Deep-Level and Chemically-Active Site Densities at Vicinal GaAs(100)-Al Interfaces,” Phys. Rev. B, Rapid Comm., 44, 1991, p. 1391.
    128. Z.Hang, D. Yan, F.H. Pollak, G.D. Pettit, and J.M. Woodall, “Temperature Dependence of the Direct Band Gap of InGaAs”, Phys. Rev. B 44(1991) p. 10546.
    129. Y. Yin, D. Yan, F. H. Pollak, G. D. Pettit and J. M. Woodall, “Observation of Franz-Keldysh Oscillations in the Stress-Modulated Spectra of (001) n-type GaAs,” Phys. Rev. B, Rapid Comm., 42, 1991, p. 12138.
    130. J. L. Freeouf, A. C. Warren, P. D. Kirchner, J. M. Woodall, and M. R. Melloch, “Surface Fermi Level Engineering: Or There’s More to Schottky Barriers than Just Making Diodes and Field Effect Transistor Gates,” J. Vac. Sci. Technol., B 9 4, 1991, p. 2355.
    131. K. Woodhouse, R. C. Newman, T. J. de Lyon, J. M. Woodall, G. J. Scilla, and F. Cardone, “LVM Spectroscopy of Carbon and Carbon-Hydrogen Pairs in GaAs Grown by MOMBE,” Semicond. Sci. Technol., 6, 1991, p. 330.
    132. *S. Chang, I. M. Vitomirov, L. J. Brillson, D. F. Rioux, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Correlation of Interfacial Chemistry, Barrier Height, and Step-Density for Al on GaAs (100) Vicinal Surfaces,” J. Vac. Sci. Technol., A 9 (3), 1991, p. 902.
    133. T. J. de Lyon, N. I. Buchan, P. D. Kirchner, J. M. Woodall, D. T. McInturff, G. J. Scilla, and F. Cardone, “Use of CCl4 and CHCl3 in Gas Source Molecular Beam Epitaxy for Carbon Doping of GaAs and GaxIn1-xP,” J. Crystal Growth, 111, 1991, p. 564.
    134. M. R. Melloch, K. Mahalingam, N. Otsuka, J. M. Woodall, and A. C. Warren, “GaAs Buffer Layers Grown at Low Substrate Temperatures Using As2 and the formation of Arsenic Precipitates,” J. Crystal Growth, 111, 1991, p. 39.
    135. *T. J. de Lyon, J. M. Woodall, D. T. McInturff, P. D. Kirchner, J. A. Kash, R. J. S. Bates, R. T. Hodgson, and F. Cardone, “High Frequency Operation of Heavily Carbon-Doped Ga0.51In0.49P/GaAs Surface-Emitting LEDs Grown by Metalorganic Molecular Beam Epitaxy,” Appl. Phys. Lett., 59, 1991, p. 402.
    136. *J. A. Silberman, T. J. De Lyon, and J. M. Woodall, “Valence Band Shift due to Doping in P+ GaAs,” Appl. Phys. Lett., 58, 1991, p. 2126.
    137. *A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, and N. Otsuka, “Subpicosecond, Freely-Propagating Electromagnetic Pulse Generation and Detection Using GaAs:As,” Appl. Phys. Lett., 58, 1991, p. 1512.
    138. *T. J. de Lyon, N. I. Buchan, P. D. Kirchner, J. M. Woodall, G. J. Scilla, and F. Cardone, “High Carbon Doping Efficiency of Bromomethanes in Gas Source MBE Growth of GaAs,” Appl. Phys. Lett., 58, 1991, p. 517.
    139. J.M. Woodall, A.C. Warren, P.D. Kirchner, J.L. Freeouf “Surface Fermi Level Engineering – or there’s more to Schottky Barriers than just the arguments among Physicists”, LEOS, (1991) p. 27.
    140. *J. M. Woodall, R. T. Hodgson, and R. L. Gunshor, “Low Resistivity P-Type ZnSe Through Surface Fermi Level Engineering,” Appl. Phys. Lett., 58, 1991, p. 379.
    141. *X. Yin, H-M. Chen, F. H. Pollak, Y. Chan, P. A. Montano, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Photoreflectance Study of Surface Photovoltage Effects at (100) GaAs Surfaces/Interfaces,” Appl. Phys. Lett., 58, 1991, p. 260.
    142. T. J. de Lyon, J. M. Woodall, P. D. Kirchner, D. T. McInturff, G. J. Scilla, and F. Cardone, “Carbon Doping of GaP, GaInP, and AlInP in Metalorganic Molecular Beam Epitaxy Using Methyl and Ethyl Precursors,” J. Vac. Sci. Technol., B 9 (1), 1991, p. 136.
    143. S. Chang, J. L. Shaw, R. E. Viturro, L. J. Brillson, P. D. Kirchner and J. M. Woodall, “Temperature-Dependent Formation of Interface States and Schottky Barriers at Metal/MBE GaAs (100) Junctions,” J. Vac. Sci. Technol., A 8 (5), 1990, p. 3803.
    144. *D. Kuchta, J. R. Whinnery, J. S. Smith, J. M. Woodall and D. Pettit, “Improved Contacts to Semi-Insulating GaAs Photoconductive Switches using a Graded Layer of InGaAs,” Appl. Phys. Lett., 57, 1990, p. 1534.
    145. *S. Chang, L. J. Brillson, D. F. Rioux, Y. J. Kime, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Metal/GaAs Interface Chemical and Electronic Properties: GaAs Orientation Dependence,” J. Vac. Sci. Technol., B 8 (4), 1990, p. 1008. [pdf] doi: 10.1116/1.585021
    146. J. L. Freeouf, D. A. Buchanan, S. L. Wright, T. N. Jackson, J. Batey, B. Robinson, A. Callegari, A. Paccagnella, and J. M. Woodall, “Studies of GaAs-Oxide Interfaces with and without Si Interlayer,” J. Vac. Sci. Technol., B 8 (4), 1990, p. 860. [pdf] doi: 10.1116/1.584979
    147. D. V. Rossi, E. R. Fossum, P. D. Kirchner, and J. M. Woodall, “Transport Properties and Applications of Unstrained  In sub 0.75 Ga sub 0.25 As/AlGaAs Heterojunctions,” J. Vac. Sci. Technol., B 8 (4), 1990, p. 779. [pdf] doi: 10.1116/1.584965
    148. *A. W. Kleinsasser, T. N. Jackson, D. McInturff, F. Rammo, G. D. Pettit, and J. M. Woodall, “Crossover from Tunneling to Metallic Behavior in Superconductor-Semiconductor Contacts,” Appl. Phys. Lett., 57, 1990, p. 1811. [pdf] doi: 10.1063/1.104029
    149. M. R. Melloch, N. Otsuka, J. M. Woodall, A. C. Warren, and J. L. Freeouf, “Formation of Arsenic Precipitates in GaAs Buffer Layers Grown by MBE at Low Substrate Temperatures,” Appl. Phys. Lett., 57, 1990, p. 1531. [pdf] doi: 10.1063/1.103343
    150. *A. C. Warren, J. M. Woodall, J. L. Freeouf, D. Grischkowsky, D. T. McInturff, M. R. Melloch, and N. Otsuka, “Arsenic Precipitates and the Semi-Insulating Properties of GaAs Buffer Layers Grown by Low Temperature Molecular Beam Epitaxy,” Appl. Phys. Lett., 57, 1990, p. 1331. [pdf] doi: 10.1063/1.103474
    151. *S. Chang, I. M. Vitomirov, L. J. Brillson, D. F. Rioux, P. D. Kirchner, G. D. Pettit, J. M. Woodall, and M. H. Hecht, “Confirmation of Temperature-Dependent Photovoltaic Effect on Fermi Level Measurements by Photoemission Spectroscopy,” Phys. Rev. B, 41, 12, 1990, p. 299. [pdf] doi: 10.1103/PhysRevB.41.12299
    152. H. Shen, F. H. Pollak, and J. M. Woodall, “Photoreflectance Study of Fermi Level changes in Photowashed GaAs,” J. Vac. Sci. Technol., B 8 (3), 1990, p. 413. [pdf] doi: 10.1116/1.585036
    153. *T. J. de Lyon, J. A. Kash, S. Tiwari, J. M. Woodall, D. Yan, and F. H. Pollak, “Low Surface Recombination Velocity and Contact Resistance Using p+/p Carbon-Doped GaAs Structures,” Appl. Phys. Lett., 56, 1990, p. 2442. [pdf] doi: 10.1063/1.102903
    154. *S. Chang, L. J. Brillson, Y. J. Kime, D. S. Rioux, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Orientation Dependent Chemistry and Schottky-Barrier Formation at Metal-GaAs Interfaces,” Phys. Rev. Lett., 64, 1990, p. 2551. [pdf] doi: 10.1103/PhysRevLett.64.2551
    155. *T. J. de Lyon, J. M. Woodall, M. S. Goorsky, and P. D. Kirchner, “Lattice-Contraction due to Carbon Doping of GaAs Grown by Metalorganic Molecular Beam Epitaxy,” Appl. Phys. Lett., 56, 1990, p. 1040. [pdf] doi: 10.1063/1.102608
    156. Z. Liliental-Weber, C. W. Wilmsen, K. M. Geib, P. D. Kirchner, J. M. Baker, and J. M. Woodall, “Structure and Chemical Composition of Water-Grown Oxides of GaAs,” J. Appl. Phys., 67, 1990, p. 1863. [pdf] doi: 10.1063/1.345614
    157. H. Shen, F. H. Pollak, J. M. Woodall, and R. N. Sacks, “Photoreflectance Study of Electric Field Distributions in Semiconductors Heterostructures Grown on Semi-Insulating Substrates,” Jour. Elect. Mat., 19, 1990, p. 283. [pdf] doi: 10.1007/BF02733820
    158. J. L. Freeouf, J. M. Woodall, L. J. Brillson, and R. E. Viturro, “Metal/(100) GaAs Interface: Case for a Metal-Insulator-Semiconductor-like Structure,” Appl. Phys. Lett., 56, 69 (1990). [pdf] doi: 10.1063/1.102654
    159. J. M. Woodall, P. D. Kirchner, J. L. Freeouf and A. C. Warren, “The Electronic Properties and Control of Semiconductor Interfaces,” Solid-State Electronics, 33, Supplement, 1990, p. 53. INVITED (Keynote Address) [pdf] doi: 10.1016/0010-938X(90)90090-R

Top    –    2010-Present    –    2000-2009    –    1990-1999    –    1980-1989    –    1970-1979    –    1960-1969

1980-1989

    1. *A. W. Kleinsasser, T. N. Jackson, D. McInturff, F. Rammo, G. D. Pettit, and J. M. Woodall, “Superconducting InGaAs Junction Field-Effect Transistors with Nb Electrodes,” Appl. Phys. Lett., 55, 1989, p. 1909. [pdf] doi: 10.1063/1.102166
    2. C. R. Wie, G. Burns, F. H. Dacol, G. D. Pettit and J. M. Woodall, “X-ray and Raman Studies of MeV Ion-bombarded GaInAs/GaAs,” Nucl. Inst. Meth. Phys. Res., B43, 1989, p. 560. [pdf] doi: 10.1016/0168-583X(89)90406-0
    3. *R. E. Viturro, S. Chang, J. L. Shaw, C. Mailhiot, L. J. Brillson, A. Terrasi, Y. Hwu, G. Margaritondo, P. D. Kirchner, and J. M. Woodall, “Low Temperature Formation of Metal/Molecular Beam Epitaxy-GaAs (100) Interfaces: Approaching Ideal Chemical and Electronic Limits,” J. Vac. Sci. Technol., B7, 1989, p. 1007. [pdf] doi: 10.1116/1.584791
    4. *R. E. Viturro, C. Mailhiot, J. L. Shaw, L. J. Brillson, D. LaGraffe, G. Margaritondo, G. D. Pettit and J. M. Woodall, “Interface States and Schottky Barrier Formation at Metal/GaAs Junctions,” J. Vac. Sci. Technol., A7, 1989, p. 855. [pdf] doi: 10.1116/1.575810
    5. E. A. Fitzgerald, G. P. Watson, R. E. Proano, D. G. Ast, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Nucleation Mechanisms and the Elimination of Misfit Dislocations at Mismatched Interfaces by Reduction in Growth Area,” J. Appl. Phys., 65, 1989, p. 2220. [pdf] doi: 10.1063/1.342834
    6. *H. Shen, F. H. Pollak, J. M. Woodall, R. N. Sacks, “Electric Field Distributions in a Molecular-Beam-Epitaxy GaAlAs/GaAs/GaAs Structure Using Photoreflectance,” J. Vac. Sci. Technol., B7, 1989, p. 804. [pdf] doi: 10.1116/1.584604
    7. *K. L. Kavanagh, M. A. Capano, L. W. Hobbs, J. C. Barbour, P. M. J. Marée, W. Schaff, J. W. Mayer, D. Pettit, J. M. Woodall, J. A. Stroscio, and R. M. Feenstra, “Asymmetries in Dislocation Densities, Surface Morphology and Strain of GaInAs/GaAs Single Heterolayers,” J. Appl. Phys., 64, 1988, p. 4843. [pdf] doi: 10.1063/1.341232
    8. C. W. Wilmsen, P. D. Kirchner, and J. M. Woodall, “Effects of N2, O2, H2O on GaAs Passivated by Photowashing or Coating with Na2 S:9H2O,” J. Appl. Phys., 64 (6), 1988, p. 3287. [pdf] doi: 10.1063/1.341519
    9. R. E. Viturro, J. L. Shaw, L. J. Brillson, J. M. Woodall, P. D. Kirchner, G. D. Pettit, and S. L. Wright, “Arsenic-and Metal-Induced GaAs Interface States by Low Energy Cathodoluminescence Spectroscopy,” J. Vac. Sci. Technol., B 6 (4), 1397 (1988). [pdf] doi: 10.1116/1.584229
    10. C. W. Wilmsen, P. D. Kirchner, J. M. Baker, D. T. McInturff, G. D. Pettit, and J. M. Woodall, “Characterization of Photochemically Unpinned GaAs,” J. Vac. Sci. Technol., B 6 (4), 1988, p. 1180. [pdf] doi: 10.1116/1.584275
    11. *H. Shen, Z. Hang, S. H. Pan, F. H. Pollak, and J. M. Woodall, “Dependence of the Photoreflectance of Semi-Insulating GaAs on Temperature and Pump Chopping Frequency,” Appl. Phys. Lett., 52, 1988, p. 2058. [pdf] doi: 10.1063/1.99580
    12. *H. Shen, S. H. Pan, Z. Hang, J. Leng, F. H. Pollak, J. M. Woodall and R. N. Sacks, “Photoreflectance of GaAs and Ga0.82Al0.18As at Elevated Temperatures up to 600 °C,” Appl. Phys. Lett., 53, 1988, p. 1080. [pdf] doi: 10.1063/1.100027
    13. M. D. Pashley, K. W. Haberern and J. M. Woodall, “The (001) Surface of Molecular-Beam Epitaxially Grown GaAs Studied by Scanning Tunnelling Microscopy,” J. Vac. Sci. Technol., B 6 (4), 1988, p. 1468. [pdf] doi: 10.1116/1.584198
    14. L. J. Brillson, R. E. Viturro, C. Mailhiot, J. L. Shaw, N. Tache, J. McKinley, G. Margaritondo, J. M. Woodall, P. D. Kirchner, G. D. Pettit, and S. L. Wright, “Unpinned Schottky Barrier Formation at Metal-GaAs Interfaces” J. Vac. Sci Technol., B 6 (4), 1988, p. 1263. [pdf] doi: 10.1116/1.584247
    15. G. Blom and J.M. Woodall, “Effect of Iso-electronic Dopants on the Dislocation Density of GaAs,” J. Electron. Mater., 17, 391 (1988). [pdf] doi: 10.1007/BF02652124
    16. *E. A. Fitzgerald, P. D. Kirchner, R. Proano, G. D. Pettit, J. M. Woodall, and D. G. Ast, “Elimination of Interface Defects in Mismatched Epilayers by a Reduction in Growth Area,” Appl. Phys. Lett., 52, 1988, p. 1496. [pdf] doi: 10.1063/1.99110
    17. *D. L. Rogers, J. M. Woodall, D. G. Pettit, and D. T. McInturff, “High Performance, 1.3 Micron, GaInAs Detectors Fabricated on GaAs Substrates,” IEEE Electron Dev. Lett., EDL-9, 1988, p. 515. [pdf] doi: 10.1109/55.17829
    18. *M. D. Pashley, K. W. Haberern, W. Friday, J. M. Woodall, and P. D. Kirchner, “TheStructure of GaAs (001) (2×4)-c(2×8) Determined by Scanning Tunneling Microscopy,” Phys. Rev. Lett., 60, 1988, p. 2176. [pdf] doi: 10.1103/PhysRevLett.60.2176
    19. *R. E. Viturro, J. L. Shaw, C. Mailhiot, L. J. Brillson, N. Tache, J. McKinley, G. Margaritondo, J. M. Woodall, P. D. Kirchner, G. D. Pettit, and S. L. Wright, “Band Bending and Interface States for Metals on GaAs,” Appl. Phys. Lett., 52, 1988, p. 2052. [pdf] doi: 10.1063/1.99578
    20. P. D. Kirchner, A. C. Warren, J. M. Woodall, C. W. Wilmsen, S. L. Wright, and J. M. Baker, “Oxide Passivation of Photochemically Unpinned GaAs,” J. Electrochem. Soc., 135, 1988, p. 1822. [pdf] doi: 10.1149/1.2096139
    21. E. A. Fitzgerald, D. G. Ast, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, “Structure and Recombination in InGaAs/GaAs Heterostructures,” J. Appl. Phys., 63, 1988, p. 693. [pdf] doi: 10.1063/1.340059
    22. *G. Burns, C. R. Wie, F. H. Dacol, G. D. Pettit, and J. M. Woodall, “Phonon Shifts and Strains in Strain-Layered GaInAs,” Appl. Phys. Lett., 51, 1987, p. 1919. [pdf] doi: 10.1063/1.98300
    23. *A. C. Warren, J. M. Woodall, E. R. Fossum, G. D. Pettit, P. D. Kirchner, and D. T. McInturff, “Masked, Anisotropic Thermal Etching and Regrowth for in-situ Patterning of Compound Semiconductors,” Appl. Phys. Lett., 51, 1987, p. 1818.[pdf] doi: 10.1063/1.98994
    24. P. E. Batson, C. Y. Wong, J. M. Woodall, and K. L. Kavanagh, “Local Bonding and Electronic Structure Obtained from Electron Energy Loss Scattering,” Ultramicroscopy, 22, 1987. [pdf] doi: 10.1016/0304-3991(87)90053-2
    25. A. W. Kleinsasser, T. N. Jackson, G. D. Pettit, H. Schmid, J. M. Woodall, and D. P. Kern, “Semiconductor Heterostructure Weak Links for Josephson and Superconducting FET Applications,” IEEE Trans. Magnetics, MAG-23, 1987, p. 703. [pdf] doi: 10.1109/TMAG.1987.1065138
    26. *A. Davidson, M. J. Brady, D. J. Frank, J. M. Woodall, and A. Kleinsasser, “Transport Properties of a Superconductor-Semiconductor Ohmic Contact,” IEEE Trans. Magnetics, MAG-23, 1987, p. 727. [pdf] doi: 10.1109/TMAG.1987.1064899
    27. D. V. Rossi, E. R. Fossum, G. D. Pettit, P. D. Kirchner, and J. M. Woodall, “Reduced Reverse Bias Current in Al-GaAs and InGaAs-GaAs Junctions Containing an Interfacial Arsenic Layer,” J. Vac. Sci. Technol., B 5 (4), 1987, p. 982. [pdf] doi: 10.1116/1.583830
    28. *A. W. Kleinsasser, T. N. Jackson, G. D. Pettit, H. Schmid, J. M. Woodall, and D. P. Kern, “n-InAs/GaAs Heterostructure Superconducting Weak Links with Nb Electrodes,” Appl. Phys. Lett., 49, 1986, p. 1741. [pdf] doi: 10.1063/1.97233
    29. L. J. Brillson, M. L. Slade, R. E. Viturro, M. K. Kelly, N. Tache, G. Margaritondo, J. M. Woodall, P. D. Kirchner, G. D. Pettit, and S. L. Wright, “Fermi Level Pinning and Chemical Interactions at Metal-InxGa1-xA (100) Interfaces,” J. Vac. Sci. Technol., B 4, 1986, p. 919. [pdf] doi: 10.1116/1.583537
    30. J. M. Woodall, P. D. Kirchner, G. D. Pettit, and J. J. Rosenberg, “Pseudomorphic GaInAs/GaAs Single Quantum Well Structures with High Electron Mobility,” Surf. Sci., 174, 1986, p. 399. [pdf] doi: 10.1109/T-ED.1985.22357
    31. *L. J. Brillson, M. L. Slade, R. E. Viturro, M. K. Kelly, N. Tache, G. Margaritondo, J. M. Woodall, P. D. Kirchner, G. D. Pettit, and S. L. Wright, “Absence of Fermi Level Pinning at Metal-InGaAs(100) Interfaces,” Appl. Phys. Lett., 48, 1986, p. 1458. [pdf] doi: 10.1063/1.97027
    32. *P. E. Batson, K. L. Kavanagh, J. M. Woodall, and J. W. Mayer, “Electron-Energy-Loss Scattering Near a Single Misfit Dislocation at the GaAs/GaInAs Interface,” Phys. Rev. Lett., 57, 1986, p. 2729. [pdf] doi: 10.1103/PhysRevLett.57.2729
    33. *S. D. Offsey, J. M. Woodall, A. C. Warren, P. D. Kirchner, T. I. Chappell, and G. D. Pettit, “Unpinned (100) GaAs Surfaces in Air Using Photochemistry,” Appl. Phys. Lett., 48, 1986, p. 475. [pdf] doi: 10.1063/1.96535
    34. J. L. Freeouf and J. M. Woodall, “Defective Heterojunction Models,” Surf. Sci., 168, 1986, p. 518. INVITED [pdf] doi: 10.1007/978-94-009-3073-5_15
    35. K. L. Kavanagh, J. W. Mayer, C. W. Magee, J. Sheets, J. Tong, P. D. Kirchner and J. M. Woodall, “The Polycrystalline-Si Contact to GaAs,” J. Electrochem. Soc., 133, 1986, p. 1176. [pdf] doi: 10.1149/1.2108814
    36. K. L. Kavanagh, J. W. Mayer, C. W. Magee, J. Sheets, J. Tong, and J. M. Woodall, “Silicon Diffusion at Poly-Si/GaAs Interfaces,” Appl. Phys. Lett., 47, 1985, p. 1208. [pdf] doi: 10.1063/1.96330
    37. *J. J. Rosenberg, M. Benlamri, P. D. Kirchner, J. M. Woodall, and G. D. Pettit, “An In0.15Ga0.85As/GaAs Pseudomorphic Single Quantum Well HEMT,” IEEE Electron Device Letters, EDL-6, 1985, p. 491. [pdf] doi: 10.1109/EDL.1985.26205
    38. A. W. Kleinsasser, J. M. Woodall, G. D. Pettit, T. N. Jackson, J. Y.-F. Tang, and P. D. Kirchner, “n+ InGaAs/nGaAs Heterojunction Schottky Diodes with Low Barriers Controlled by Band Offset and Doping Level,” J. Vac. Sci. B, 3 (4), 1985, p. 1274.[pdf] doi: 10.1116/1.583011
    39. *P. D. Kirchner, T. N. Jackson, G. D. Pettit, and J. M. Woodall, “Low-Resistance Nonalloyed Ohmic Contacts to Si-Doped Molecular Beam Epitaxial GaAs,” Appl. Phys. Lett., 47 (1), 1985, p. 26. [pdf] doi: 10.1063/1.96391
    40. *A. W. Kleinsasser, J. M. Woodall, G. D. Pettit, T. N. Jackson, J. Y.-F. Tang, and P. D. Kirchner, “Controlled Low Barrier Height n+-InGaAs/n-GaAs Pseudomorphic Heterojunction Schottky Diodes,” Appl. Phys. Lett., 45 (12), 1985, p. 1168. [pdf] doi: 10.1063/1.95747
    41. H. J. Hoffmann and J. M. Woodall, “Photo-Enhanced Etching of n-Si,” Appl. Phys. A, 3333, 1984, p. 243. [pdf] doi: 10.1007/BF00614665
    42. J. M. Woodall and J. L. Freeouf, “Summary Abstract: Surface Treatment and Interface Properties: What Really Matters?” J. Vac. Sci. Technol., B 2 (3) 1984, p. 510. INVITED [pdf] doi: 10.1116/1.582808
    43. *G. D. Pettit, J. M. Woodall, S. L. Wright, P. D. Kirchner, and J. L. Freeouf, “Summary Abstract: The MBE Growth of GaAs Free of Oval Defects,” J. Vac. Sci. Technol., B 2 2, 1984, p. 241. [pdf] doi: 10.1116/1.582794
    44. *A. H. Bond, P. Parayanthal, F. H. Pollak and J. M. Woodall, “Direct Measurement of Proton Straggling in GaAlAs for Nuclear Profiling,” J. Appl. Phys., 55, 1984, p. 3433. [pdf] doi: 10.1063/1.333359
    45. *J. M. Woodall, G. D. Pettit, T. N. Jackson, C. Lanza, K. L. Kavanagh and J. W. Mayer, “Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces,” Phys. Rev. Lett., 51, 1983, p. 1783. [pdf] doi: 10.1103/PhysRevLett.51.1783
    46. P. Oelhafen, J. L. Freeouf, G. D. Pettit, and J. M. Woodall, “Elevated Temperature Low Energy Ion Cleaning of GaAs,” J. Vac. Sci. Technol., B 1, 1983, p. 787. [pdf] doi: 10.1116/1.582693
    47. *J. M. Woodall, P. Oelhafen, T. N. Jackson, J. L. Freeouf, and G. D. Pettit, “Photoelectrochemical Passivation of GaAs Surfaces,” J. Vac. Sci. Technol., B 1, 1983, p. 795. [pdf] doi: 10.1116/1.582680
    48. M. I. Nathan, T. N. Jackson, P. D. Kirchner, E. E. Mendez, W. D. Pettit, and J. M. Woodall, “Persistent Photoconductance and Photoquenching of Selectively Doped Al0.3Ga0.7As/GaAs Heterojunctions,” J. Electron. Mater., 12, 1983, p. 719.[pdf] doi: 10.1007/BF02676799
    49. *J. R. Shealy, V. G. Kreismanis, D. K. Wagner, and J. M. Woodall, “Improved Photoluminescence of Organometallic Vapor Phase Epitaxial AlGalAs Using a New Gettering Technique on the Arsine Source,” Appl. Phys. Lett., 42, 1983, p. 83. [pdf] doi: 10.1063/1.93735
    50. P. Parayanthal, F. H. Pollak and J. M. Woodall, “Raman Scattering Characterization of Ga1-xAlxAs/GaAs Heterojunctions: Epilayer and Interface,” Appl. Phys. Lett., 41, 1982, p. 961. [pdf] doi: 10.1063/1.93356
    51. *J. R. Shealy and J. M. Woodall, “A New Technique for Gettering Oxygen and Moisture from Gases Used in Semiconductor Processing,” Appl. Phys. Lett., 41, 1982, p. 88. [pdf] doi: 10.1063/1.93299
    52. J. M. Woodall and J. L. Freeouf, “Summary Abstract: Are They Really Schottky Barriers After All?,” J. Vac. Sci. Technol., 21, 1982, p. 574. [pdf] doi: 10.1116/1.571766
    53. J. L. Freeouf, T. N. Jackson, S. E. Laux, and J. M. Woodall, “Size Dependence of “Effective” Barrier Heights of Mixed-Phase Contacts,” J. Vac. Sci. Technol., 21, 1982, p. 570. [pdf] doi: 10.1116/1.571765
    54. J.L. Freeouf, T.N. Jackson, J.M. Woodall*”Effective Barrier Heights of Mixed Phase Contacts: Size Effects,” Appl. Phys. Lett., 40, 634 (1982). [pdf] doi: 10.1063/1.93171
    55. *J. L. Freeouf and J. M. Woodall, “Schottky Barriers: An Effective Work Function Model,” Appl. Phys. Lett., 39, 1981, p. 727. [pdf] doi: 10.1063/1.92863
    56. J. M. Woodall and J. L. Freeouf, “GaAs Metallization: Some Problems and Trends,” J. Vac. Sci. Technol., 19, 1981, p. 794. INVITED [pdf] doi: 10.1116/1.571150
    57. *J. M. Woodall, J. L. Freeouf, G. D. Pettit, T. Jackson, and P. Kirchner, “Ohmic Contacts to n-GaAs Using Graded Band Gap Layers of Ga1-xInxAs Grown by Molecular Beam Epitaxy,” J. Vac. Sci. Technol., 19, 1981, p. 626. [pdf] doi: 10.1116/1.571074
    58. P. D. Kirchner, J. M. Woodall, J. L. Freeouf, D. J. Wolford, and G. D. Pettit, “Volatile Metal-Oxide Incorporation in Layers of GaAs and Ga1-xAlxAs Grown by Molecular Beam Epitaxy,” J. Vac. Sci. Technol., 19, 1981, p. 604. [pdf] doi: 10.1116/1.571138
    59. *J. S. Rosner, P. M. S. Lesser, F. H. Pollak, and J. M. Woodall, “Nondestructive Characterization of Ga1-xAlxAs-GaAs Interfaces Using Nuclear Profiling,” J. Vac. Sci. Technol., 19, 1981, p. 584. [pdf] doi: 10.1116/1.571133
    60. *H. J. Hoffmann, J. M. Woodall, and T. I. Chappell, “Voltage-Controlled Photoetching of GaAs,” Appl. Phys. Lett., 38, 1981, p. 564. [pdf] doi: 10.1063/1.92414
    61. *P. D. Kirchner, J. M. Woodall, J. L. Freeouf, and G. D. Pettit, “Volatile Metal-Oxide Incorporation in Layers of GaAs, Ga1-xAlxAs and Related Compounds Grown by Molecular Beam Epitaxy,” Appl. Phys. Lett., 38, 1981, p. 427. [pdf] doi: 10.1063/1.92384
    62. *J. M. Woodall, H. Rupprecht, R. J. Chicotka, and G. Wicks, “Proximate Capless Annealing of GaAs Using a Controlled Excess As Vapor Pressure Source,” Appl. Phys. Lett., 38, 1981, p. 639. [pdf] doi: 10.1063/1.92462
    63. *F. H. Pollak and J. M. Woodall, “Characterization of Strain at Ga1-xAlxAs-GaAs Interfaces Using Electrolyte Electroreflectance,” J. Vac. Sci. Technol., 17, 1980, p. 1108. [pdf] doi: 10.1116/1.570623
    64. J. M. Woodall, “III-V Compounds and Alloys: An Update,” Science, 208, 1980, p. 908. INVITED [pdf] doi: 10.1126/science.208.4446.908

Top    –    2010-Present    –    2000-2009    –    1990-1999    –    1980-1989    –    1970-1979    –    1960-1969

1970-1979

    1. *H. J. Hovel, R. T. Hodgson and J. M. Woodall, “The Effect of Fluorescent Wavelength Shifting on Solar Cell Spectral Response,” Solar Energy Materials, 2, 1979, p. 19.
    2. J. M. Woodall, G. D. Pettit, T. Chappell, and H. J. Hovel, “Photoluminescent Properties of GaAs-GaAlAs, GaAs-Oxide and GaAs-ZnS Heterojunctions,” J. Vac. Sci. Technol., 16, 1979, p. 1389.
    3. *G. D. Pettit, J. M. Woodall, and H. J. Hovel, “Photoluminescent Characterization of GaAs Solar Cells,” Appl. Phys. Lett., 35, 1979, p. 335.
    4. M. B. Small, R. Ghez, R. M. Potemski, and J. M. Woodall, “The Formation of Ga1-xAlxAs Layers on the Surface of GaAs During Continual Dissolution in Ga-Al-As Solutions,” Appl. Phys. Lett., 35, 1979, p. 209.
    5. J. O. Olowolafe, P. S. Ho, H. J. Hovel, J. E. Lewis, and J. M. Woodall, “Contact Reactions in Pd/GaAs Junctions,” J. Appl. Phys., 50, 1979, p. 955.
    6. J.M. Woodall, C. Lanza, and J.L. Freeouf “Electrical Properties of the Ga-GaAs Interface Immersed in electrolytic Solutions”,  J. Vac. Sci. Technol. 15, (1978) p. 1436.ƒ
    7. G. D. Pettit, J. J. Cuomo, T. H. DiStefano, and J. M. Woodall, “Solar Absorbing Surfaces of Anodized Dendritic Tungsten,” IBM J. of Res. and Dev., 22, 1978, p. 372. INVITED
    8. *T. H. DiStefano, G. D. Pettit, J. M. Woodall, and J. J. Cuomo, “Conformal Antireflective Coatings on a Textured Tungsten Surface,” Appl. Phys. Lett., 32, 1978, p. 676.
    9. M. Tomkiewicz and J. M. Woodall, “Photoelectrolysis of Water with Semiconductor Materials,” J. Electrochem. Soc., 124, 1977, p. 1436.
    10. G.M. Blom, S.L. Blank and J.M. Woodall, “Liquid Phase Epitaxy” J. Electrochem. Soc., 122, (1975) p. 343C.
    11. J. M. Woodall and H. J. Hovel, “LPE Growth of GaAs-Ga1-xAlx As Solar Cells,” J. Crystal Growth, 39, 1977, p. 108. INVITED
    12. *J. M. Woodall and H. J. Hovel, “An Isothermal Etchback-Regrowth Method for High Efficiency Ga1-xAlxAs-GaAs Solar Cells,” Appl. Phys. Lett., 30, 1977, p. 492.
    13. M. Tomkiewicz and J. M. Woodall, “Photoassisted Electrolysis of Water by Visible Irradiation of a p-type GaP Electrode,” Science, 196, 1977, p. 990.
    14. H. J. Hovel and J. M. Woodall, “Technique for Producing ‘Good’ GaAs Solar Cells Using Poor-Quality Substrates,” Appl. Phys. Lett., 27, 1975, p. 447.
    15. J. M. Woodall, “Outlooks for GaAs Terrestrial Photovoltaics,” J. Vac. Sci. Technol., 12, Sept./Oct. (1975). INVITED
    16. *J. J. Cuomo, J. F. Ziegler, and J. M. Woodall, “A New Concept for Solar Energy-Thermal Conversion,” Appl. Phys. Lett., 26, 1975, p. 557.
    17. A. Onton, M. R. Lorenz, J. M. Woodall, and R. J. Chicotka, “Optical Characterization of Compound Semiconductor Alloys,” J. Crystal Growth, 24, 1974, p. 911. INVITED
    18. *F. Stern and J. M. Woodall, “Photon Recycling in Semiconductor Lasers,” J. Appl. Phys., 45, 1974, p. 3904.
    19. H. J. Hovel and J. M. Woodall, “Ga1-xAlxAs-GaAs p-p-n Heterojunction Solar Cells,” J. Electrochem. Soc., 120, 1973, p. 1246.
    20. *W. P. Dumke, J. M. Woodall, and V. L. Rideout, “GaAs-GaAlAs Heterojunction Transistor for High Frequency Operation,” Solid State Electronics, 15, 1972, p. 1339.
    21. *J. M. Woodall and H. J. Hovel, “High-Efficiency GaAlAs-GaAs Solar Cells,” Appl. Phys. Lett., 21, 1972, p. 379.
    22. *B. A. Scott, K. H. Nichols, R. M. Potemski, and J. M. Woodall, “Magnesium Gallate Spinel: A Substrate for the Direct Liquid Phase Epitaxial Growth of GaAlAs,” Appl. Phys. Lett., 21, 1972, p. 121.
    23. *J. M. Woodall, R. M. Potemski, S. E. Blum, and R. Lynch, “Ga1-xAlxAs LED Structures Grown on GaP Substrates,” Appl. Phys. Lett. 20, 1972, p. 375.
    24. *R. M. Potemski and J. M. Woodall, “A New Technique for Terminating Liquid Phase Epitaxial Growth,” J. Electrochem. Soc., 119, 1972, p. 277.
    25. *J. M. Woodall, “Solution Grown Ga1-xAlxAs Superlattice Structures,” J. Crystal Growth, 12, 1972, p. 32.
    26. *J. M. Woodall, “Isothermal Solution Mixing Growth of Thin Ga1-xAlxAs Layers,” J. Electrochem. Soc., 118, 1971, p. 150. J. Appl. Phys., 42, 1971, p. 925.
    27. D.G. Carlson, E. Mosekilde and J.M. Woodall, “Magnetoacoustoelectric Effects in InP”, J. Appl. Phys. 42, (1971) p. 925.
    28. *T. S. Plaskett, J. M. Woodall, and A. Segmüller, “The Effect of Growth Orientation on the Crystal Perfection of Horizontal Bridgman Grown GaAs,” J. Electrochem. Soc., 118, 1971, p. 115.
    29. *G. M. Blom and J. M. Woodall, “Efficient Electroluminescence from InP Diodes Grown by Liquid Phase Epitaxy,” Appl. Phys. Lett., 17, (1970), p. 373.

Top    –    2010-Present    –    2000-2009    –    1990-1999    –    1980-1989    –    1970-1979    –    1960-1969

1960-1969

  1. J. M. Woodall, H. Rupprecht, and W. Reuter, “Liquid Phase Epitaxial Growth of Ga1-xAlx As,” J. Electrochem. Soc., 116, 1969, p. 899.
  2. M. R. Lorenz, W. Reuter, W. P. Dumke, R. J. Chicotka, G. D. Pettit, and J. M. Woodall, “Band Structure and Direct Transition Electroluminescence in the In1-xGaxP Alloys,” Appl. Phys. Lett., 13, 1968, p. 421.
  3. K. K. Shih, J. M. Woodall, S. E. Blum, and L. M. Foster, “Efficient Green Electroluminescence from GaP p-n Junctions Grown by Liquid Phase Epitaxy,” J. App. Phys., 39, 1968, p. 2962.
  4. *H. Rupprecht, J. M. Woodall, G. D. Pettit, J. W. Crowe, and H. F. Quinn, “Stimulated Emission from GaAlAs Diodes at 77 K,” Quant. Elect. 4, 1968, p. 35.
  5. *H. Rupprecht, J. M. Woodall, and G. D. Pettit, “Efficient Visible Electroluminescence at 300 ° K from Ga1-x Al x As p-n Junctions Grown by Liquid Phase Epitaxy,” Appl. Phys. Lett., 11, 1967, p. 81.
  6. J. M. Woodall, “Donor and Carrier Distributions in Oxygen-Grown GaAs,” Trans. Met. Soc. AIME 239, 1967, p. 378.
  7. R. F. Peart, K. Weiser, J. Woodall, and R. Fern, “Some Effects of Zn Diffusion on Mn-Doped GaAs,” Appl. Phys. Lett., 9, 1966, p. 200.
  8. *J. M. Woodall and J. F. Woods “Preparation of 0.5-1000 ohm-cm GaAs by Acceptor Precipitation During Heat Treatment of Oxygen Grown Crystals,” Solid State Comm. 4, 1966, p. 33.
  9. *H. Rupprecht, J. M. Woodall, K. Konnerth, and D. G. Pettit, “Efficient Electro-luminescence from GaAs Diodes at 300 K,” Appl. Phys. Lett., 9, 1966, p. 221.
  10. H. Rupprecht, M. Pilkuhn, and J. M. Woodall, “Optical Gain and Losses of Epitaxial and Diffused GaAs Injection Lasers,” IEEE J. Quant. Electronics QE-1, 1965, p. 184.
  11. K. Weiser, R. S. Levitt, M. I. Nathan, G. Burns, and J. Woodall, “Indium Phosphide Laser Characteristics,” Trans. of the Metallurgical Society of AIME 230, 1964, p. 271.
  12. *J. M. Woodall, “High Resistivity Gallium Arsenide,” Electrochem. Technology 2, 167 (1964).
  13. *H. Rupprecht, M. Pilkuhn, and J. M. Woodall, “Continuous Stimulated Emission from GaAs Diodes at 77 K,” Proc. IEEE 51, 1243 (1963).

Top    –    2010-Present    –    2000-2009    –    1990-1999    –    1980-1989    –    1970-1979    –    1960-1969

Comments are closed.